N-Channel 80V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7
N-Channel 80V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7
N-Channel 80V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7
MOSFET N-CH 80V 180A TO263-7 Product overview: IPB019N08N3GATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB019N08N3GATMA
Infineon MOSFET IPB019N08N3GATMA1
Manufacturer: Infineon Technologies
Win Source Part Number: 921247-IPB019N08N3GA
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 80 V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7
Package: TO-263-7, D2Pak (6 Leads + Tab)
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB019
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-7
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB019N08N3GATMA1CT,
MOSFET N-CH 80V 180A TO263-7
MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
MOSFET, N CHANNEL, 80V, 180A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
MOSFET N-CH 80V 180A TO263-7
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPB019N08N3GATMA1DKR-ND | 278-IPB019N08N3GATMA1 | 2207376 | 921247-IPB019N08N3GATMA1 | IPB019N08N3GATMA1 | IPB019N08N3GATMA1 | 60R2644 | IPB019N08N3GATMA1 |
| Product Name | Single FETs, MOSFETs | 80V 180A MOSFET Transistor | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB019N08N3GATMA1 | Single FETs, MOSFETs | MOSFET | Mosfet, N Channel, 80V, 180A, To-263; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-263; TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | TO-263; TO-263 | SOT3; PG-TO263-7 | TO-263; TO-263-7, D²Pak (6 Leads + Tab) | TO-3; TO-263 | TO-263; TO-263-7, D2PAK (6 Leads + Tab) | |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 80 volts | 80 volts | ||||||
| Transconductance | 0.1030 kS |
