Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB050N06NG IPB050N06NG

Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065209-IPB050N06NG Current Rating: 100 A Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 60 V Number of Elements: 1 Input Capacitance: 6.1 nF Power Dissipation: 300 W Rise Time: 31 ns Fall Time: 30 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-263 Alternative Parts (Cross-Reference): IPB050N06NGIPB050N06 N G; Popularity: Low Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Voltage Rating (DC): 60 V Element Configuration: Single Max Power Dissipation: 300 W Turn-On Delay Time: 21 ns Continuous Drain Current (ID): 100 A Drain to Source Breakdown Voltage: 60 V Turn-Off Delay Time: 59 ns Drain to Source Resistance: 5 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 4.7 mΩ