Infineon Technologies AG Single FETs, MOSFETs IPB04N03LA

Description
N-Channel 25V 80A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2
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Description
N-Channel 25V 80A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - IPB04N03LAINTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB04N03LAINTR-ND
Single FETs, MOSFETs IPB04N03LAINTR-ND
N-Channel 25V 80A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2

N-Channel 25V 80A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2

Buy Now Datasheet
FETs - Single - IPB04N03LA - 1186014-IPB04N03LA - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IPB04N03LA
1186014-IPB04N03LA
FETs - Single - IPB04N03LA 1186014-IPB04N03LA
Manufacturer: Infineon Technologies Win Source Part Number: 1186014-IPB04N03LA Packaging: Cut Tape (CT) Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.infineon.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 107W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 25V Id - Continuous Drain Current: 80A Rds On (Maximum) at Id, Vgs: 3.9mOhm at 55A, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 60μA Gate Charge (Qg) (Maximum) at Vgs: 32nC at 5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3877pF at 15V

Manufacturer: Infineon Technologies
Win Source Part Number: 1186014-IPB04N03LA
Packaging: Cut Tape (CT)
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.infineon.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 107W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 25V
Id - Continuous Drain Current: 80A
Rds On (Maximum) at Id, Vgs: 3.9mOhm at 55A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2V at 60μA
Gate Charge (Qg) (Maximum) at Vgs: 32nC at 5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3877pF at 15V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB04N03LA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPB04N03LA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPB04N03LA
MOSFET N-CH 25V 80A TO263-3

MOSFET N-CH 25V 80A TO263-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors RF Transistors
Product Number IPB04N03LAINTR-ND 1186014-IPB04N03LA IPB04N03LA
Product Name Single FETs, MOSFETs FETs - Single - IPB04N03LA Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
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