Infineon Technologies AG FETs - Single - IPB04N03LA IPB04N03LA

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1186014-IPB04N03LA Packaging: Cut Tape (CT) Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.infineon.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 107W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 25V Id - Continuous Drain Current: 80A Rds On (Maximum) at Id, Vgs: 3.9mOhm at 55A, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 60μA Gate Charge (Qg) (Maximum) at Vgs: 32nC at 5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3877pF at 15V
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1186014-IPB04N03LA Packaging: Cut Tape (CT) Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.infineon.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 107W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 25V Id - Continuous Drain Current: 80A Rds On (Maximum) at Id, Vgs: 3.9mOhm at 55A, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 60μA Gate Charge (Qg) (Maximum) at Vgs: 32nC at 5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3877pF at 15V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IPB04N03LA - 1186014-IPB04N03LA - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IPB04N03LA
1186014-IPB04N03LA
FETs - Single - IPB04N03LA 1186014-IPB04N03LA
Manufacturer: Infineon Technologies Win Source Part Number: 1186014-IPB04N03LA Packaging: Cut Tape (CT) Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.infineon.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 107W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 25V Id - Continuous Drain Current: 80A Rds On (Maximum) at Id, Vgs: 3.9mOhm at 55A, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 60μA Gate Charge (Qg) (Maximum) at Vgs: 32nC at 5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3877pF at 15V

Manufacturer: Infineon Technologies
Win Source Part Number: 1186014-IPB04N03LA
Packaging: Cut Tape (CT)
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.infineon.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 107W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 25V
Id - Continuous Drain Current: 80A
Rds On (Maximum) at Id, Vgs: 3.9mOhm at 55A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2V at 60μA
Gate Charge (Qg) (Maximum) at Vgs: 32nC at 5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3877pF at 15V

Buy Now
Singapore
25V 80A MOSFET Transistor
278-IPB04N03LA
25V 80A MOSFET Transistor 278-IPB04N03LA
MOSFET N-CH 25V 80A TO263-3 Product overview: IPB04N03LA from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB04N03LA can be used for catalog matching and distributor lookup.

MOSFET N-CH 25V 80A TO263-3 Product overview: IPB04N03LA from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB04N03LA can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPB04N03LAINTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB04N03LAINTR-ND
Single FETs, MOSFETs IPB04N03LAINTR-ND
N-Channel 25V 80A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2

N-Channel 25V 80A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB04N03LA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPB04N03LA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPB04N03LA
MOSFET N-CH 25V 80A TO263-3

MOSFET N-CH 25V 80A TO263-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1186014-IPB04N03LA 278-IPB04N03LA IPB04N03LAINTR-ND IPB04N03LA
Product Name FETs - Single - IPB04N03LA 25V 80A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
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