N-Channel 80V 120A (Tc) 300W (Tc) Surface Mount PG-TO263-3
N-Channel 80V 120A (Tc) 300W (Tc) Surface Mount PG-TO263-3
N-Channel 80V 120A (Tc) 300W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 80V 120A D2PAK Product overview: IPB020N08N5ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB020N08N5ATMA1
Manufacturer: Infineon Technologies
Win Source Part Number: 921249-IPB020N08N5AT
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 80 V 120A (Tc) 300W (Tc) Surface Mount PG-TO263-3
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB020
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 91 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB020N08N5ATMA1CT, IPB020N08N5ATMA1-ND,
MOSFET N-CH 80V 120A D2PAK
MOSFET, N-CH, 80V, 120A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 80V 120A D2PAK
80V 120A 2mΩ@100A,10V 300W 3.8V@208uA N Channel TO-263-3 MOSFETs ROHS
| RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2439265 | IPB020N08N5ATMA1TR-ND | 278-IPB020N08N5ATMA1 | 921249-IPB020N08N5ATMA1 | IPB020N08N5ATMA1 | 13AC9023 | IPB020N08N5ATMA1 | IPB020N08N5ATMA1 | IPB020N08N5ATMA1 |
| Product Name | MOSFETs | Single FETs, MOSFETs | 80V 120A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB020N08N5ATMA1 | Single FETs, MOSFETs | Mosfet, N-Ch, 80V, 120A, To-263; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Package Type | TO-263; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | SOT3; PG-TO263-3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263 | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 80 volts | 80 volts | 80 volts | ||||||
| Transconductance | 0.1000 kS |
