N-Channel 650V 18A (Tc) 26W (Tc) Through Hole PG-TO220 Full Pack
MOSFET N-CHANNEL 650V 18A TO220 Product overview: IPA60R180P7XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650V, 18A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 18A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA60R180P7XKSA1
Win Source Part Number: 1202268-IPA60R180P7X
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ P7
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 280µA
Power Dissipation (Max): 26W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220 Full Pack
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPA60R180P7;
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001606042
Base Product Number: IPA60R
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET, N-CH, 600V, 18A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
MOSFET N-CHANNEL 650V 18A TO220
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 448-IPA60R180P7XKSA1-ND | 278-IPA60R180P7XKSA1 | 1202268-IPA60R180P7XKSA1 | 2420983 | 34AC1648 | IPA60R180P7XKSA1 | IPA60R180P7XKSA1 |
| Product Name | Single FETs, MOSFETs | N-Channel 650V 18A TO220 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | Mosfet, N-Ch, 600V, 18A, To-220Fp; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| Package Type | TO-220; TO-220-3 Full Pack | Tube | SOT3 | TO-220; TO-220 | TO-3; TO-220 | TO-220; TO-220-3 Full Pack | |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 600 volts | ||||||
| PD | 26 milliwatts | 26000 milliwatts |
