Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA65R660CFD IPA65R660CFD

Manufacturer: Infineon Technologies
Win Source Part Number: 068959-IPA65R660CFD
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 27.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 200μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 615pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 660 mOhm @ 2.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

MOSFETs N-Ch 700V 6A TO220FP CoolMOS CFD2 Product overview: IPA65R660CFD from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 6A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPA65R660CFD can be used for catalog matching and distributor lookup.

650V 6A 594mΩ@10V,2.1A 62.5W 4V@200uA 1 N-Channel TO-220 MOSFETs ROHS