N-channel MOSFET in a D2PAK-2 package designed for high-current switching applications. The device has a drain-source breakdown voltage of 75 V, a continuous drain current rating of 80 A at 25 °C, and a maximum on-resistance of 4.9 mΩ at 10 V gate-source voltage. It operates with a gate-source voltage range of ±20 V and is qualified to AEC-Q101 for automotive applications. The package is a surface-mount D2PAK-2 with a thermal resistance from junction to case of 0.62 K/W. The device meets RoHS standards and is suitable for industrial and automotive use.
MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB049NE7N3 G |
| Product Name | MOSFET |
