MOSFET N-CH 100V 120A TO263-3 Product overview: IPB033N10N5LFATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB033N10N5LFATM
N-Channel 100V 120A (Tc) 179W (Tc) Surface Mount PG-TO263-3
N-Channel 100V 120A (Tc) 179W (Tc) Surface Mount PG-TO263-3
N-Channel 100V 120A (Tc) 179W (Tc) Surface Mount PG-TO263-3
Infineon MOSFET IPB033N10N5LFATMA1
Infineon MOSFET IPB033N10N5LFATMA1
Infineon MOSFET IPB033N10N5LFATMA1
Win Source Part Number: 1004204-IPB033N10N5L
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™-5
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4.1V @ 150µA
Power Dissipation (Max): 179W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPB033N10N5LFATMA1-N
Base Product Number: IPB033
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET DIFFERENTIATED MOSFETS
MOSFET, N-CH, 100V, 120A, 150DEG C, 179W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.3V RoHS Compliant: Yes
MOSFET N-CH 100V 120A TO263-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPB033N10N5LFATMA1 | IPB033N10N5LFATMA1CT-ND | 2207380 | 1004204-IPB033N10N5LFATMA1 | IPB033N10N5LFATMA1 | 93AC7099 | IPB033N10N5LFATMA1 |
| Product Name | 100V 120A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Mosfet, N-Ch, 100V, 120A, 150Deg C, 179W; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 100 volts | ||||||
| Transconductance | 0.0230 kS | ||||||
| PD | 179 milliwatts | 179000 milliwatts |
