Infineon Technologies AG Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

Page: 1 2 3 4 5 6 7 8 9 10 11 12 20 27
Product Name Notes
100V, N-Ch, 2.4 mΩ max, Automotive MOSFET, sTOLL, OptiMOS™5 The IAUA210N10S5N024 is a 2.4mR 100V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next...
2000 V, 60 A Boost EasyPACK™ 3B CoolSiC™ MOSFET Module EasyPACK™ 3B CoolSiC™ MOSFET 2000 V 60 A Boost module with PressFit PIN and NTC. Summary of Features Best in...
3-Level 1200 V CoolSiC™ MOSFET Easy Module EasyPACK™ 2B 1200 V / 8 mΩ 3-Level module with CoolSiC™ MOSFET with enhanced generation 1, integrated NTC temperature sensor, pre-applied thermal interface...
62 mm 1200 V , 5.5 mΩ half-bridge module with CoolSiC™ MOSFET technology in the well known 62mm housing combined with M1H chip technology and pre-applied Thermal Interface Material (TIM).
62 mm 1200 V, 5.5 mΩ half-bridge module with CoolSiC™ MOSFET technology in the well known 62mm housing combined with M1H chip technology. Also available with pre-applied Thermal Interface Material...
62 mm CoolSiC™ MOSFET common source module 2000 V, 2.6 mΩ G1 in the well known 62mm housing with M1H chip technology. Summary of Features High current density Low switching...
62 mm CoolSiC™ MOSFET common source module 2000 V, 3.5 mΩ G1 in the well known 62mm housing design with M1H chip technology. Summary of Features High current density Low...
62 mm CoolSiC™ MOSFET half bridge module 1200 V, 1.6 mΩ G1 in the well known 62mm housing combined with M1H chip technology. Also available with pre-applied Thermal Interface Material...
62 mm CoolSiC™ MOSFET half bridge module 1200 V, 2.1 mΩ G1 in the well known 62mm housing combined with M1H chip technology and pre-applied Thermal Interface Material (TIM). Summary...
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 2.6 mΩ G1 in the well known 62mm housing combined with M1H chip technology and pre-applied Thermal Interface Material (TIM). Summary...
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 2.6 mΩ G1 in the well known 62mm housing with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM).
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 3.5 mΩ G1 in the well known 62mm housing design with M1H chip technology and pre-applied Thermal Interface Material (TIM). Summary...
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 3.5 mΩ G1 in the well known 62mm housing design with M1H chip technology. Also available with pre-applied Thermal Interface Material...
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 5.2 mΩ G1 in the well known 62mm housing design with M1H chip technology. Also available with pre-applied Thermal Interface Material...
A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications. All of this enables the Best-in-Class...
Applications Automotive Automotive secondary power distribution unit Diesel direct injection High-voltage DC-DC converter for electric vehicles Power conversion EasyPACK™ CoolSiC™ Automotive MOSFET 1200V Half Bridge Module EasyPACK™ 1B, 8...
Applications Belt starter generator 48 V – inverter ISG EV traction inverter Transfer case brushless DC (BLDC) The power module implements the new CoolSiC™ Automotive MOSFET 1200V, optimized for electric...
Booster 1200 V CoolSiC™ MOSFET Module EasyPACK™ 1B 1200 V, 33 mΩ and 2 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology Summary of...
Booster 1200 V CoolSiC™ MOSFET Module EasyPACK™ 1B 1200 V, 33 mΩ and 3 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology. Summary of...
CoolSiC™ MOSFET half-bridge module 1200 V EasyDUAL™ 1B CoolSiC™ MOSFET half-bridge module 1200 V, 8 mΩ G1 with integrated NTC temperature sensor and PressFIT Contact Technology. Summary of Features Best-in-class...
EasyDUAL™ 1B CoolSiC™ MOSFET half-bridge module 1200 V, 55 mΩ with PressFit contact technology and AlN Ceramic. Summary of Features Wide RBSOA Very low stray inductance Enlarged gate drive voltage...
EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 1200 V, 11 mΩ G1 with integrated NTC temperature sensor, PressFIT contact technology and pre-applied thermal interface material (TIM). Summary of Features Best-in-class packages...
EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 2000 V, 6 mΩ with NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic Summary of Features Best in Class packages with 12mm...
EasyPACK™ 1B 1200 V, 16 mΩ and 2 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1 and PressFIT Contact Technology. Summary of Features Best-in-class packages with 12 mm height...
EasyPACK™ 1B 1200 V, 33 mΩ and 1 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology. Summary of Features Easy family with 12mm height...
EasyPACK™ 1B CoolSiC™ MOSFET 1200 V, 17 mΩ booster single MPPT module with enhanced generation 1, NTC and PressFIT Contact Technology. Summary of Features Best-in-class packages with 12 mm height...
EasyPACK™ 1B CoolSiC™ MOSFET fourpack module 1200 V, 17 mΩ G1 with NTC and PressFIT contact technology. Summary of Features Best-in-class packages with 12 mm height Leading edge WBG material...
EasyPACK™ 1B CoolSiC™ MOSFET fourpack module 1200 V, 17 mΩ G1 with NTC, pre-applied thermal interface material (TIM) and PressFIT contact technology. Summary of Features Best-in-class packages with 12 mm...
EasyPACK™ 1B CoolSiC™ MOSFET fourpack module 1200 V, 33 mΩ G1 with NTC and PressFIT contact technology. Summary of Features Best-in-class packages with 12 mm height Leading edge WBG material...
EasyPACK™ 1B CoolSiC™ MOSFET sixpack module 1200 V, 28 mOhm with PressFit contact technology. Summary of Features Wide RBSOA Very low stray inductance Enlarged gate drive voltage window PressFIT pins...
EasyPACK™ 1B CoolSiC™ MOSFET sixpack module 1200 V, 33 mΩ G1 with NTC, PressFIT contact technology and aluminium nitride ceramic. Summary of Features Best-in-class packages with 12.25mm height Leading edge...
EasyPACK™ 1B CoolSiC™ MOSFET sixpack module 1200 V, 33 mOhm with PressFit contact technology. Summary of Features Wide RBSOA Very low stray inductance Enlarged gate drive voltage window PressFIT pins...
EasyPACK™ 1B Module with fast TRENCHSTOP™ IGBT3, Rapid 1 diode and PressFIT / NTC Summary of Features Automotive High Speed IGBT H3 and Rapid 1 Diode Low Switching Losses Low...
EasyPACK™ 1B Modules with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and PressFIT / NTC. Evaluation Board available Summary of Features Increased blocking voltage capability to 650V Low Switching Losses Low...
EasyPACK™ 2B 750V, 300A half bridge automotive qualified IGBT module The FF300R08W2P2_B11A is a very compact and flexible product for inverter applications of hybrid and electric vehicles. This 750 V,...
EasyPACK™ 2B CoolSiC™ MOSFET 1200 V, 13 mΩ six pack module with CoolSiC™ MOSFET enhanced generation 1, integrated NTC temperature sensor and PressFIT contact technology, aluminium nitride ceramic. Summary of...
EasyPACK™ 2B CoolSiC™ MOSFET 3-level module 2000 V, 6 mΩ with NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic. Summary of Features Best in Class packages with 12mm...
EasyPACK™ 2B Modules with TRENCHSTOP™ IGBT3, Emitter Controlled 3 diode and PressFIT / NTC. Summary of Features Increased blocking voltage capability to 650V Low Switching Losses Low VCEsat Trench...
EasyPACK™ 3B CoolSiC™ MOSFET 1200 V, 3 mOhm ANPC module with L7, EC7, integrated NTC temperature sensor and High Current Pin. Summary of Features Easy family with 12mm height enhanced...
EasyPACK™ 3B CoolSiC™ MOSFET 2000 V half-bridge module, integrated NTC temperature sensor and High Current Pin. Summary of Features Easy family with 12mm height Gate-source voltages of +23 V and...
EasyPACK™ 3B CoolSiC™ MOSFET fourpack module 1200 V, 11 mΩ with NTC temperature sensor and PressFIT Contact Technology. Summary of Features Best in Class packages with 12mm height Leading edge...
EasyPACK™ 3B CoolSiC™ MOSFET fourpack module 2000 V, 10 mΩ G1 with NTC temperature sensor and PressFIT Contact Technology. Summary of Features Best in Class packages with 12 mm height...
EasyPACK™ 3B, CoolSiC™ MOSFET fourpack module 2000 V, 6 mΩ G1 with NTC temperature sensor and PressFIT Contact Technology Summary of Features Best in Class packages with 12 mm height...
EconoDUAL™ 3 CoolSiC™ MOSFET half-bridge module 1200 V, 1.4 mΩ with enhanced generation 1, integrated NTC temperature sensor, PressFIT Contact Technology and wave structure on the back side of the...
EconoDUAL™ 3 CoolSiC™ MOSFET half-bridge module 1200 V, 1.4 mΩ with enhanced generation 1, integrated NTC temperature sensor, PressFIT contact technology, and pre-applied Thermal Interface Material. Also available with wave...
Half-bridge 1200 V CoolSiC™ MOSFET Easy Module EasyDUAL™ 3B 1200 V / 1.44 mΩ halfbridge module with CoolSiC™ MOSFET with enhanced generation 1, integrated NTC temperature sensor and PressFIT Contact...
HybridPACK™ 1 is an automotive qualified power module designed for Hybrid Electric Vehicle (HEV) applications Summary of Features Complete 3-phase Six-Pack with NTC in one compact module 650V Trench-Field-Stop IGBT3...
HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product derivate FS820R08A6P2LB has long AC power terminals...
HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. Find appropriate Automotive EiceDRIVER™. Summary of Features Blocking Voltage...
HybridPACKTM DSC L 700 V, 200 A six-pack TRENCHSTOPTM IGBT3 including matching diodes with enhanced softness is a very compact IGBT molded module targeting hybrid and electric vehicles.
HybridPACKTM DSC S1 700 V, 400 A half-bridge TRENCHSTOPTM IGBT3 including matching diodes with enhanced softness is a very compact IGBT molded module targeting hybrid and electric vehicles.
Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SSO8 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max...
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both...
Infineon's 200 V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48 V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor...
Infineon's 250V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. Summary...
New OptiMOS™-5 40 V Mosfet in sTOLL Package (high power leadless package in 7x8 mm²) for future automotive applications (JEDEC name is MO-319A and IEC name is HSOF-5). sTOLL offers...
New OptiMOS™-5 40 V Mosfet in sTOLL Package (high power leadless package in 7x8 mm2) for future automotive applications (JEDEC name is MO-319A and IEC name is HSOF-5). sTOLL offers...
OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). Summary of...
Radiation tolerant, 150V, 36A, N-channel MOSFET, PG-TO263, 30krad(Si)TID Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified for space applications according to AEC-Q101 standard Potential...
Radiation tolerant, 150V, 98A, N-channel MOSFET, PG-TO247, 30krad(Si)TID Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified for space applications according to AEC-Q101 standard Potential...
Radiation tolerant, 60V, 106A, N-channel MOSFET, PG-TO247, 30krad(Si) TID Summary of Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified according to AEC-Q101 standard Potential...
Radiation tolerant, 60V, 52A, N-channel MOSFET, PG-TO263, 30krad(Si) TID Summary of Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified according to AEC-Q101 standard Potential...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L006. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L006. Applications Automotive...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L009. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L009 Designers who...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L011. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L011 Applications Automotive...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L014. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L014 Applications Automotive...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L019. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L019 Applications Automotive...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L028. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L028 Applications Automotive...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N005. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N005. Applications Automotive...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N009. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N009 Applications Automotive...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N012. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N012 Applications Automatic...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N020. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N020 Applications Automotive...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N030. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N030 Applications Automotive...
Sixpack 1200 V CoolSiC™ MOSFET Easy Module EasyPACK™ 1B 1200 V / 55 mΩ sixpack module with CoolSiC™ MOSFET with enhanced generation 1, NTC and PressFIT Contact Technology. Summary of...
Summary of Features • N-channel - Enhancement mode - Normal level • AEC qualified • MSL1 up to 260°C peak reflow • 100% Avalanche tested • Feasible for automatic optical...
Summary of Features N-channel - Enhancement mode - Logic level AEC qualified MSL1 up to 260°C peak reflow 100% Avalanche tested Feasible for automatic optical inspection (AOI) Designers who used...
Summary of Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested Designers who used this...
Summary of Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified for space applications according to AEC-Q101 standard Benefits Load switch Power conditioning unit Power...
Summary of Features OptiMOS™ 5 - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature...
Summary of Features OptiMOS™ 5 - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature...
Summary of Features OptiMOS™ power MOSFET N-channel MOSFET Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL3 up to 260°C peak reflow 175°C operating...
Summary of Features OptiMOS™-5 - power MOSFET for automotive applications N-channel - Enhancement mode AEC-Q101 qualified MSL1 up to 260°C peak reflow Green Product (RoHS compliant) 100% Avalanche tested
Summary of Features OptiMOS™-5 - power MOSFET for automotive applications N-channel - Enhancement mode AEC-Q101 qualified MSL1 up to 260°C peak reflow Green Product (RoHS compliant) 100% Avalanche tested Applications...
Summary of Features OptiMOS7 40V ™ power MOSFET N-channel MOSFET Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL1 up to 260°C peak reflow...
Summary of Features OptiMOSTM 5 – power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating...
Summary of Features Very low Ron*A High avalanche capability High SOA ruggedness Small gate charges Fast switching times (turn on/off) N-channel - Enhancement mode Extended qualification beyond AEC-Q101 Enhanced electrical...
The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens...
The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS950R08A6P2B comes with a PinFin...
The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS950R08A6P2LB comes with a PinFin...
The HybridPACK™ DC6i is a very compact six-pack module (750V/650A) optimized for hybrid and electrical vehicles This power module complements the benchmark EDT2 IGBT generation with Direct Cooled Base Plate...
The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The direct cooled baseplate with PinFin structure in...
The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS660R08A6P2FB comes with a flat baseplate.
The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2B comes with a baseplate with...
The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2LB comes with a baseplate with...
The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2LB comes with a flat baseplate.
The HybridPACKTM DSC S2 is a very compact half-bridge module targeting Hybrid- and Electric Vehicle applications. The module is based on Infineon’s long-term experience developing IGBT power modules and implements...
The IAUA170N10S5N031 is a 3.1mR 100V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in 48V Auxiliaries like...
The IAUA180N08S5N026 is a 2.6mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in LED Lighting as...
The IAUA180N10S5N029 is a 2.9mR 100V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in 48V Auxiliaries like...
The IAUA220N08S5N021 is a 2.1mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in LED Lighting as...
The IAUA250N08S5N018 is a 1.8mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOSTM 5 technology. Next to others it is used in LED...
The IAUC100N10S5L054 is a 5.4mR 100V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in LED lighting and for...
The IAUC26N10S5L245 is a 24.5mR 100V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in engine management, wireless charging...
The IAUC40N08S5L140 is a 14mR 80V MOSFET in a 5x6 SSO8 package, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in LED lighting and wireless chargers. Summary...
The IAUC50N08S5N102 is a 10.2mR 80V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in DCDC converter and motor...
The IAUC60N10S5L110 is an 11mR 100V MOSFET in a 5x6 SSO8 package, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in LED lighting and DCDC Converters. Summary...
The IAUC64N08S5L075 is a 7.5mR 80V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in LED lighting and for...
The new integrated half-bridge (5mm x 6mm) from Infineon is the innovative and cost efficient package solution for motor drive & body applications. The dual SSO8 5x6 mm2 package...
The new OptiMOS™ 5 technology for 60V MOSFET in the industry standard SSO8 (5x6mm2) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction...
The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard Single SS08 (5x6mm2) small footprint package with leading performance providing low RDSon, Qg and Gate capacitance and minimizing...
The OptiMOS™ 5 technology in the SSO8 (5x6mm2) small footprint package provides leading performance for automotive applications. Summary of Features Copper clips for higher current loading Specifically designed for fast-switching...
The power module implements Infineon’s next generation chip technology EDT3 (Si IGBT) 750V, optimized for electric drive train applications, from mid- to high-range automotive power classes. Summary of Features V...
The power module implements Infineon’s next generation IGBT chip technology 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes. Summary of Features VCES = 1200V,...
The power module implements the new CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications. Summary of Features Electrical Features New semiconductor material - Silicon Carbide Blocking voltage 1200V...
The power module implements the second generation CoolSiC™ Automotive MOSFET 1200 V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and...
The power module implements the second generation CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural...
The power module implements the second generation CoolSiC™ Automotive MOSFET 750V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural...
This HybridPACK™ Drive is a very compact six-pack module (1200V/400A) optimized for hybrid and electric vehicles. The power module implements the new CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive...
This innovative TSC package enables best cooling, high power density optimized system costs An initial portfolio offering starts with 4 products in OptiMOSTM 6 40V and is extended soon.
XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 1.9 mΩ with .XT interconnection technology for decarbonizing transportation. Summary of Features CoolSiC™ MOSFET 3.3 kV Integrated body diode XHP™ 2 housing...
XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 2.5 mΩ with .XT interconnection technology for decarbonizing transportation. Summary of Features CoolSiC™ MOSFET 3.3 kV Integrated body diode XHP™ 2 housing...
XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 3.8 mΩ with .XT interconnection technology for decarbonizing transportation. Summary of Features CoolSiC™ MOSFET 3.3 kV Integrated body diode XHP™ 2 housing...

<< Prev Next >>