Infineon Technologies AG Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
| Product Name | Notes |
|---|---|
| 100V, N-Ch, 2.4 mΩ max, Automotive MOSFET, sTOLL, OptiMOS™5 The IAUA210N10S5N024 is a 2.4mR 100V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next... | |
| 120V, N-Ch, 1.7 mΩ max, Automotive MOSFET, TOLL, OptiMOS™ 5 The IAUTN12S5N017 is a 1.7 mΩ, 120 V MOSFET coming in the TOLL package with Infineon’s leading OptiMOS™ 5 technology. | |
| 62 mm 1200 V , 5.5 mΩ half-bridge module with CoolSiC™ MOSFET technology in the well known 62mm housing combined with M1H chip technology and pre-applied Thermal Interface Material (TIM). | |
| 62 mm 1200 V, 5.5 mΩ half-bridge module with CoolSiC™ MOSFET technology in the well known 62mm housing combined with M1H chip technology. Also available with pre-applied Thermal Interface Material... | |
| 62 mm CoolSiC™ MOSFET common source module 2000 V, 3.5 mΩ G1 in the well known 62mm housing design with M1H chip technology. Summary of Features High current density Low... | |
| 62 mm CoolSiC™ MOSFET half bridge module 2000 V, 3.5 mΩ G1 in the well known 62mm housing design with M1H chip technology and pre-applied Thermal Interface Material (TIM). Summary... | |
| 62 mm CoolSiC™ MOSFET half bridge module 2000 V, 3.5 mΩ G1 in the well known 62mm housing design with M1H chip technology. Also available with pre-applied Thermal Interface Material... | |
| 62 mm CoolSiC™ MOSFET half bridge module 2000 V, 5.2 mΩ G1 in the well known 62mm housing design with M1H chip technology. Also available with pre-applied Thermal Interface Material... | |
| A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications. All of this enables the Best-in-Class... | |
| Applications Belt starter generator 48 V – inverter ISG EV traction inverter Transfer case brushless DC (BLDC) The power module implements the new CoolSiC™ Automotive MOSFET 1200V, optimized for electric... | |
| CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™ 1200 V, 220 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor... | |
| CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor... | |
| CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in a D2PAK-7L package (TO-263-7) build on a state-of-the-art trench semiconductor... | |
| CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process... | |
| CoolSiC™ 1200 V, 14 mΩ SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized... | |
| CoolSiC™ 1200 V, 20 mΩ SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 20 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized... | |
| CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance... | |
| CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 350 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance... | |
| CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance... | |
| CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package CoolSiC™ 1700 V, 1000 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used... | |
| CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package CoolSiC™ 1700 V, 450 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used... | |
| CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used... | |
| CoolSiC™ MOSFET 650 V G2 in Thin-TOLL 8x8 package The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like... | |
| CoolSiC™ MOSFET 650 V G2 in TO-247-3 package The CoolSiC™ MOSFET 650 V, 40 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables... | |
| CoolSiC™ MOSFET 650 V G2 in TO-247-3 package The CoolSiC™ MOSFET 650 V, 50 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables... | |
| CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 15 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and... | |
| CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 20 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and... | |
| CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 40 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and... | |
| CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 50 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and... | |
| CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 7 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and... | |
| CoolSiC™ MOSFET 650 V G2 in TOLT package The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of... | |
| CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that... | |
| CoolSiC™ MOSFET discrete 1200 V, 10 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 12 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions,... | |
| CoolSiC™ MOSFET discrete 1200 V, 17 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions,... | |
| CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 34 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions,... | |
| CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 7 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 78 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET half-bridge module 1200 V EasyDUAL™ 1B CoolSiC™ MOSFET half-bridge module 1200 V, 8 mΩ G1 with integrated NTC temperature sensor and PressFIT Contact Technology. Summary of Features Best-in-class... | |
| EasyDUAL™ 1B CoolSiC™ MOSFET half-bridge module 1200 V, 55 mΩ with PressFit contact technology and AlN Ceramic. Summary of Features Wide RBSOA Very low stray inductance Enlarged gate drive voltage... | |
| EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 2000 V, 6 mΩ with NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic Summary of Features Best in Class packages with 12mm... | |
| EasyPACK™ 1B CoolSiC™ MOSFET sixpack module 1200 V, 28 mOhm with PressFit contact technology. Summary of Features Wide RBSOA Very low stray inductance Enlarged gate drive voltage window PressFIT pins... | |
| EasyPACK™ 1B CoolSiC™ MOSFET sixpack module 1200 V, 33 mΩ G1 with NTC, PressFIT contact technology and aluminium nitride ceramic. Summary of Features Best-in-class packages with 12.25mm height Leading edge... | |
| EasyPACK™ 1B CoolSiC™ MOSFET sixpack module 1200 V, 33 mOhm with PressFit contact technology. Summary of Features Wide RBSOA Very low stray inductance Enlarged gate drive voltage window PressFIT pins... | |
| EasyPACK™ 1B Modules with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and PressFIT / NTC. Evaluation Board available Summary of Features Increased blocking voltage capability to 650V Low Switching Losses Low... | |
| EasyPACK™ 2B CoolSiC™ MOSFET 1200 V, 13 mΩ six pack module with CoolSiC™ MOSFET enhanced generation 1, integrated NTC temperature sensor and PressFIT contact technology, aluminium nitride ceramic. Summary of... | |
| EasyPACK™ 2B Modules with TRENCHSTOP™ IGBT3, Emitter Controlled 3 diode and PressFIT / NTC. Summary of Features Increased blocking voltage capability to 650V Low Switching Losses Low VCEsat Trench... | |
| HybridPACK™ 1 is an automotive qualified power module designed for Hybrid Electric Vehicle (HEV) applications Summary of Features Complete 3-phase Six-Pack with NTC in one compact module 650V Trench-Field-Stop IGBT3... | |
| HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product derivate FS820R08A6P2LB has long AC power terminals... | |
| HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. Find appropriate Automotive EiceDRIVER™. Summary of Features Blocking Voltage... | |
| HybridPACKTM DSC L 700 V, 200 A six-pack TRENCHSTOPTM IGBT3 including matching diodes with enhanced softness is a very compact IGBT molded module targeting hybrid and electric vehicles. | |
| IAUCN08S7N016T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD... | |
| IAUCN08S7N019T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD... | |
| IAUCN08S7N024T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD... | |
| IAUCN08S7N045T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80 V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2... | |
| IAUCN10S7L180 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm... | |
| IAUCN10S7N040 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm... | |
| IAUCN10S7N074 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm... | |
| Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It... | |
| Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SSO8 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max... | |
| New OptiMOS™-5 40 V Mosfet in sTOLL Package (high power leadless package in 7x8 mm²) for future automotive applications (JEDEC name is MO-319A and IEC name is HSOF-5). sTOLL offers... | |
| New OptiMOS™-5 40 V Mosfet in sTOLL Package (high power leadless package in 7x8 mm2) for future automotive applications (JEDEC name is MO-319A and IEC name is HSOF-5). sTOLL offers... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L006. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L006. Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L009. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L009 Designers who... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L011. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L011 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L014. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L014 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L019. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L019 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L028. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L028 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N005. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N005. Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N009. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N009 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N012. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N012 Applications Automatic... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N020. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N020 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N030. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N030 Applications Automotive... | |
| SiC MOSFET in compact SMD package CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. | |
| Sixpack 1200 V CoolSiC™ MOSFET Easy Module EasyPACK™ 1B 1200 V / 55 mΩ sixpack module with CoolSiC™ MOSFET with enhanced generation 1, NTC and PressFIT Contact Technology. Summary of... | |
| Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 22 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to... | |
| Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 39 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to... | |
| Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 48 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to... | |
| Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 57 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to... | |
| Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 72 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to... | |
| Summary of Features • N-channel - Enhancement mode - Normal level • AEC qualified • MSL1 up to 260°C peak reflow • 100% Avalanche tested • Feasible for automatic optical... | |
| Summary of Features N-channel - Enhancement mode - Logic level AEC qualified MSL1 up to 260°C peak reflow 100% Avalanche tested Feasible for automatic optical inspection (AOI) Designers who used... | |
| Summary of Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested Designers who used this... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Designers who... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Applications 48... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Applications Automotive... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Applications Chassis... | |
| Summary of Features OptiMOS™ 5 - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature... | |
| Summary of Features OptiMOS™ 5 - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature... | |
| Summary of Features OptiMOS™ power MOSFET N-channel MOSFET Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL3 up to 260°C peak reflow 175°C operating... | |
| Summary of Features OptiMOS™-5 - power MOSFET for automotive applications N-channel - Enhancement mode AEC-Q101 qualified MSL1 up to 260°C peak reflow Green Product (RoHS compliant) 100% Avalanche tested | |
| Summary of Features OptiMOS™-5 - power MOSFET for automotive applications N-channel - Enhancement mode AEC-Q101 qualified MSL1 up to 260°C peak reflow Green Product (RoHS compliant) 100% Avalanche tested Applications... | |
| Summary of Features OptiMOS7 40V ™ power MOSFET N-channel MOSFET Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL1 up to 260°C peak reflow... | |
| Summary of Features OptiMOSTM 5 – power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating... | |
| Summary of Features Very low Ron*A High avalanche capability High SOA ruggedness Small gate charges Fast switching times (turn on/off) N-channel - Enhancement mode Extended qualification beyond AEC-Q101 Enhanced electrical... | |
| The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS950R08A6P2B comes with a PinFin... | |
| The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS950R08A6P2LB comes with a PinFin... | |
| The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements. Developed to deliver outstanding levels of power density and... | |
| The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings... | |
| The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles... | |
| The CoolSiC™ MOSFET 650 V, 10 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost... | |
| The CoolSiC™ MOSFET 650 V, 26 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost... | |
| The CoolSiC™ MOSFET 650 V, 33 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost... | |
| The CoolSiC™ MOSFET 650 V, 33 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized,... | |
| The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost... | |
| The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits... | |
| The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC... | |
| The CoolSiC™ MOSFET discrete 1200 V, 234 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 1200 V, 34 mΩ G2 in a TO-263-7 (D2PAK-7L) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 1200 V, 78 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 1200 V, 8 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles... | |
| The CoolSiC™ MOSFET discrete 650 V Generation 2 (G2) in TOLT leverages the G2 best-in-class switching performance while enabling all the benefits of top-side cooling. Complementing the Q-DPAK package, already... | |
| The HybridPACK™ DC6i is a very compact six-pack module (750V/650A) optimized for hybrid and electrical vehicles This power module complements the benchmark EDT2 IGBT generation with Direct Cooled Base Plate... | |
| The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The direct cooled baseplate with PinFin structure in... | |
| The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS660R08A6P2FB comes with a flat baseplate. | |
| The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2B comes with a baseplate with... | |
| The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2LB comes with a baseplate with... | |
| The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2LB comes with a flat baseplate. | |
| The IAUA170N10S5N031 is a 3.1mR 100V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in 48V Auxiliaries like... | |
| The IAUA180N08S5N026 is a 2.6mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in LED Lighting as... | |
| The IAUA180N10S5N029 is a 2.9mR 100V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in 48V Auxiliaries like... | |
| The IAUA220N08S5N021 is a 2.1mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in LED Lighting as... | |
| The IAUA250N08S5N018 is a 1.8mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOSTM 5 technology. Next to others it is used in LED... | |
| The IAUC100N10S5L054 is a 5.4mR 100V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in LED lighting and for... | |
| The IAUC26N10S5L245 is a 24.5mR 100V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in engine management, wireless charging... | |
| The IAUC40N08S5L140 is a 14mR 80V MOSFET in a 5x6 SSO8 package, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in LED lighting and wireless chargers. Summary... | |
| The IAUC50N08S5N102 is a 10.2mR 80V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in DCDC converter and motor... | |
| The IAUC60N10S5L110 is an 11mR 100V MOSFET in a 5x6 SSO8 package, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in LED lighting and DCDC Converters. Summary... | |
| The IAUC64N08S5L075 is a 7.5mR 80V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in LED lighting and for... | |
| The IAUS300N08S5N011 is a 1.1mR 80V MOSFET in a TOLG package with gullwings, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in 48V Main Inverter / Starter... | |
| The IAUS300N08S5N011T is a 1.1mR 80V MOSFET in a TOLT package for Top Side Cooling, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in 48V Main Inverter... | |
| The IAUS300N10S5N014 is a 1.4mR 100V MOSFET in a TOLG package with gullwings, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in 48V Main Inverter / Starter... | |
| The IAUT300N08S5N011 is a 1.1mR 80V MOSFET in a leadless TOLL package, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in 48V Main Inverter / Starter Generators,... | |
| The IAUTN06S5N008 is a 0,76 mΩ, 60V MOSFET coming in the TOLL package with Infineon’s leading OptiMOS™ 5 technology. Next to others the device is designed for HV-LV DCDC converter. | |
| The IAUTN06S5N008G is a 0.78 mΩ, 60 V MOSFET coming in the TOLG package with Infineon’s leading OptiMOS™ 5 technology. Next to other applications, the device is designed for HV-LV... | |
| The IAUTN12S5N018G is a 1.8 mΩ, 120 V MOSFET coming in the TOLG package with Infineon’s leading OptiMOS™ 5 technology. Next to other applications, the device is designed for HV-LV... | |
| The IAUZ30N08S5N186 is a 18.6mR 80V MOSFET in a 3.3 x 3.3 mm² S3O8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in pumps, battery... | |
| The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is... | |
| The IGC033S10S1 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is... | |
| The new integrated half-bridge (5mm x 6mm) from Infineon is the innovative and cost efficient package solution for motor drive & body applications. The dual SSO8 5x6 mm2 package... | |
| The new OptiMOS™ 5 technology for 60V MOSFET in the industry standard SSO8 (5x6mm2) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction... | |
| The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard S3O8 (3x3mm2) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction... | |
| The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard Single SS08 (5x6mm2) small footprint package with leading performance providing low RDSon, Qg and Gate capacitance and minimizing... | |
| The OptiMOS™ 5 technology in the SSO8 (5x6mm2) small footprint package provides leading performance for automotive applications. Summary of Features Copper clips for higher current loading Specifically designed for fast-switching... | |
| The power module implements Infineon’s next generation chip technology EDT3 (Si IGBT) 750V, optimized for electric drive train applications, from mid- to high-range automotive power classes. Summary of Features V... | |
| The power module implements Infineon’s next generation IGBT chip technology 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes. Summary of Features VCES = 1200V,... | |
| The power module implements the new CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications. Summary of Features Electrical Features New semiconductor material - Silicon Carbide Blocking voltage 1200V... | |
| The power module implements the second generation CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural... | |
| The power module implements the second generation CoolSiC™ Automotive MOSFET 750V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural... | |
| This HybridPACK™ Drive is a very compact six-pack module (1200V/400A) optimized for hybrid and electric vehicles. The power module implements the new CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive... | |
| This innovative TSC package enables best cooling, high power density optimized system costs An initial portfolio offering starts with 4 products in OptiMOSTM 6 40V and is extended soon. |
| << Prev | Next >> |