Infineon Technologies AG Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
| Product Name | Notes |
|---|---|
| 100V, N-Ch, 2.4 mΩ max, Automotive MOSFET, sTOLL, OptiMOS™5 The IAUA210N10S5N024 is a 2.4mR 100V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next... | |
| 2000 V, 60 A Boost EasyPACK™ 3B CoolSiC™ MOSFET Module EasyPACK™ 3B CoolSiC™ MOSFET 2000 V 60 A Boost module with PressFit PIN and NTC. Summary of Features Best in... | |
| 3-Level 1200 V CoolSiC™ MOSFET Easy Module EasyPACK™ 2B 1200 V / 8 mΩ 3-Level module with CoolSiC™ MOSFET with enhanced generation 1, integrated NTC temperature sensor, pre-applied thermal interface... | |
| 62 mm 1200 V , 5.5 mΩ half-bridge module with CoolSiC™ MOSFET technology in the well known 62mm housing combined with M1H chip technology and pre-applied Thermal Interface Material (TIM). | |
| 62 mm 1200 V, 5.5 mΩ half-bridge module with CoolSiC™ MOSFET technology in the well known 62mm housing combined with M1H chip technology. Also available with pre-applied Thermal Interface Material... | |
| 62 mm CoolSiC™ MOSFET common source module 2000 V, 2.6 mΩ G1 in the well known 62mm housing with M1H chip technology. Summary of Features High current density Low switching... | |
| 62 mm CoolSiC™ MOSFET common source module 2000 V, 3.5 mΩ G1 in the well known 62mm housing design with M1H chip technology. Summary of Features High current density Low... | |
| 62 mm CoolSiC™ MOSFET half bridge module 1200 V, 1.6 mΩ G1 in the well known 62mm housing combined with M1H chip technology. Also available with pre-applied Thermal Interface Material... | |
| 62 mm CoolSiC™ MOSFET half bridge module 1200 V, 2.1 mΩ G1 in the well known 62mm housing combined with M1H chip technology and pre-applied Thermal Interface Material (TIM). Summary... | |
| 62 mm CoolSiC™ MOSFET half bridge module 2000 V, 2.6 mΩ G1 in the well known 62mm housing combined with M1H chip technology and pre-applied Thermal Interface Material (TIM). Summary... | |
| 62 mm CoolSiC™ MOSFET half bridge module 2000 V, 2.6 mΩ G1 in the well known 62mm housing with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM). | |
| 62 mm CoolSiC™ MOSFET half bridge module 2000 V, 3.5 mΩ G1 in the well known 62mm housing design with M1H chip technology and pre-applied Thermal Interface Material (TIM). Summary... | |
| 62 mm CoolSiC™ MOSFET half bridge module 2000 V, 3.5 mΩ G1 in the well known 62mm housing design with M1H chip technology. Also available with pre-applied Thermal Interface Material... | |
| 62 mm CoolSiC™ MOSFET half bridge module 2000 V, 5.2 mΩ G1 in the well known 62mm housing design with M1H chip technology. Also available with pre-applied Thermal Interface Material... | |
| A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications. All of this enables the Best-in-Class... | |
| Applications Automotive Automotive secondary power distribution unit Diesel direct injection High-voltage DC-DC converter for electric vehicles Power conversion EasyPACK™ CoolSiC™ Automotive MOSFET 1200V Half Bridge Module EasyPACK™ 1B, 8... | |
| Applications Belt starter generator 48 V – inverter ISG EV traction inverter Transfer case brushless DC (BLDC) The power module implements the new CoolSiC™ Automotive MOSFET 1200V, optimized for electric... | |
| Booster 1200 V CoolSiC™ MOSFET Module EasyPACK™ 1B 1200 V, 33 mΩ and 2 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology Summary of... | |
| Booster 1200 V CoolSiC™ MOSFET Module EasyPACK™ 1B 1200 V, 33 mΩ and 3 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology. Summary of... | |
| CoolSiC™ MOSFET half-bridge module 1200 V EasyDUAL™ 1B CoolSiC™ MOSFET half-bridge module 1200 V, 8 mΩ G1 with integrated NTC temperature sensor and PressFIT Contact Technology. Summary of Features Best-in-class... | |
| EasyDUAL™ 1B CoolSiC™ MOSFET half-bridge module 1200 V, 55 mΩ with PressFit contact technology and AlN Ceramic. Summary of Features Wide RBSOA Very low stray inductance Enlarged gate drive voltage... | |
| EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 1200 V, 11 mΩ G1 with integrated NTC temperature sensor, PressFIT contact technology and pre-applied thermal interface material (TIM). Summary of Features Best-in-class packages... | |
| EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 2000 V, 6 mΩ with NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic Summary of Features Best in Class packages with 12mm... | |
| EasyPACK™ 1B 1200 V, 16 mΩ and 2 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1 and PressFIT Contact Technology. Summary of Features Best-in-class packages with 12 mm height... | |
| EasyPACK™ 1B 1200 V, 33 mΩ and 1 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology. Summary of Features Easy family with 12mm height... | |
| EasyPACK™ 1B CoolSiC™ MOSFET 1200 V, 17 mΩ booster single MPPT module with enhanced generation 1, NTC and PressFIT Contact Technology. Summary of Features Best-in-class packages with 12 mm height... | |
| EasyPACK™ 1B CoolSiC™ MOSFET fourpack module 1200 V, 17 mΩ G1 with NTC and PressFIT contact technology. Summary of Features Best-in-class packages with 12 mm height Leading edge WBG material... | |
| EasyPACK™ 1B CoolSiC™ MOSFET fourpack module 1200 V, 17 mΩ G1 with NTC, pre-applied thermal interface material (TIM) and PressFIT contact technology. Summary of Features Best-in-class packages with 12 mm... | |
| EasyPACK™ 1B CoolSiC™ MOSFET fourpack module 1200 V, 33 mΩ G1 with NTC and PressFIT contact technology. Summary of Features Best-in-class packages with 12 mm height Leading edge WBG material... | |
| EasyPACK™ 1B CoolSiC™ MOSFET sixpack module 1200 V, 28 mOhm with PressFit contact technology. Summary of Features Wide RBSOA Very low stray inductance Enlarged gate drive voltage window PressFIT pins... | |
| EasyPACK™ 1B CoolSiC™ MOSFET sixpack module 1200 V, 33 mΩ G1 with NTC, PressFIT contact technology and aluminium nitride ceramic. Summary of Features Best-in-class packages with 12.25mm height Leading edge... | |
| EasyPACK™ 1B CoolSiC™ MOSFET sixpack module 1200 V, 33 mOhm with PressFit contact technology. Summary of Features Wide RBSOA Very low stray inductance Enlarged gate drive voltage window PressFIT pins... | |
| EasyPACK™ 1B Module with fast TRENCHSTOP™ IGBT3, Rapid 1 diode and PressFIT / NTC Summary of Features Automotive High Speed IGBT H3 and Rapid 1 Diode Low Switching Losses Low... | |
| EasyPACK™ 1B Modules with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and PressFIT / NTC. Evaluation Board available Summary of Features Increased blocking voltage capability to 650V Low Switching Losses Low... | |
| EasyPACK™ 2B 750V, 300A half bridge automotive qualified IGBT module The FF300R08W2P2_B11A is a very compact and flexible product for inverter applications of hybrid and electric vehicles. This 750 V,... | |
| EasyPACK™ 2B CoolSiC™ MOSFET 1200 V, 13 mΩ six pack module with CoolSiC™ MOSFET enhanced generation 1, integrated NTC temperature sensor and PressFIT contact technology, aluminium nitride ceramic. Summary of... | |
| EasyPACK™ 2B CoolSiC™ MOSFET 3-level module 2000 V, 6 mΩ with NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic. Summary of Features Best in Class packages with 12mm... | |
| EasyPACK™ 2B Modules with TRENCHSTOP™ IGBT3, Emitter Controlled 3 diode and PressFIT / NTC. Summary of Features Increased blocking voltage capability to 650V Low Switching Losses Low VCEsat Trench... | |
| EasyPACK™ 3B CoolSiC™ MOSFET 1200 V, 3 mOhm ANPC module with L7, EC7, integrated NTC temperature sensor and High Current Pin. Summary of Features Easy family with 12mm height enhanced... | |
| EasyPACK™ 3B CoolSiC™ MOSFET 2000 V half-bridge module, integrated NTC temperature sensor and High Current Pin. Summary of Features Easy family with 12mm height Gate-source voltages of +23 V and... | |
| EasyPACK™ 3B CoolSiC™ MOSFET fourpack module 1200 V, 11 mΩ with NTC temperature sensor and PressFIT Contact Technology. Summary of Features Best in Class packages with 12mm height Leading edge... | |
| EasyPACK™ 3B CoolSiC™ MOSFET fourpack module 2000 V, 10 mΩ G1 with NTC temperature sensor and PressFIT Contact Technology. Summary of Features Best in Class packages with 12 mm height... | |
| EasyPACK™ 3B, CoolSiC™ MOSFET fourpack module 2000 V, 6 mΩ G1 with NTC temperature sensor and PressFIT Contact Technology Summary of Features Best in Class packages with 12 mm height... | |
| EconoDUAL™ 3 CoolSiC™ MOSFET half-bridge module 1200 V, 1.4 mΩ with enhanced generation 1, integrated NTC temperature sensor, PressFIT Contact Technology and wave structure on the back side of the... | |
| EconoDUAL™ 3 CoolSiC™ MOSFET half-bridge module 1200 V, 1.4 mΩ with enhanced generation 1, integrated NTC temperature sensor, PressFIT contact technology, and pre-applied Thermal Interface Material. Also available with wave... | |
| Half-bridge 1200 V CoolSiC™ MOSFET Easy Module EasyDUAL™ 3B 1200 V / 1.44 mΩ halfbridge module with CoolSiC™ MOSFET with enhanced generation 1, integrated NTC temperature sensor and PressFIT Contact... | |
| HybridPACK™ 1 is an automotive qualified power module designed for Hybrid Electric Vehicle (HEV) applications Summary of Features Complete 3-phase Six-Pack with NTC in one compact module 650V Trench-Field-Stop IGBT3... | |
| HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product derivate FS820R08A6P2LB has long AC power terminals... | |
| HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. Find appropriate Automotive EiceDRIVER™. Summary of Features Blocking Voltage... | |
| HybridPACKTM DSC L 700 V, 200 A six-pack TRENCHSTOPTM IGBT3 including matching diodes with enhanced softness is a very compact IGBT molded module targeting hybrid and electric vehicles. | |
| HybridPACKTM DSC S1 700 V, 400 A half-bridge TRENCHSTOPTM IGBT3 including matching diodes with enhanced softness is a very compact IGBT molded module targeting hybrid and electric vehicles. | |
| Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SSO8 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max... | |
| Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both... | |
| Infineon's 200 V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48 V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor... | |
| Infineon's 250V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. Summary... | |
| New OptiMOS™-5 40 V Mosfet in sTOLL Package (high power leadless package in 7x8 mm²) for future automotive applications (JEDEC name is MO-319A and IEC name is HSOF-5). sTOLL offers... | |
| New OptiMOS™-5 40 V Mosfet in sTOLL Package (high power leadless package in 7x8 mm2) for future automotive applications (JEDEC name is MO-319A and IEC name is HSOF-5). sTOLL offers... | |
| OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). Summary of... | |
| Radiation tolerant, 150V, 36A, N-channel MOSFET, PG-TO263, 30krad(Si)TID Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified for space applications according to AEC-Q101 standard Potential... | |
| Radiation tolerant, 150V, 98A, N-channel MOSFET, PG-TO247, 30krad(Si)TID Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified for space applications according to AEC-Q101 standard Potential... | |
| Radiation tolerant, 60V, 106A, N-channel MOSFET, PG-TO247, 30krad(Si) TID Summary of Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified according to AEC-Q101 standard Potential... | |
| Radiation tolerant, 60V, 52A, N-channel MOSFET, PG-TO263, 30krad(Si) TID Summary of Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified according to AEC-Q101 standard Potential... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L006. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L006. Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L009. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L009 Designers who... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L011. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L011 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L014. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L014 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L019. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L019 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L028. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L028 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N005. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N005. Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N009. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N009 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N012. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N012 Applications Automatic... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N020. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N020 Applications Automotive... | |
| Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N030. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N030 Applications Automotive... | |
| Sixpack 1200 V CoolSiC™ MOSFET Easy Module EasyPACK™ 1B 1200 V / 55 mΩ sixpack module with CoolSiC™ MOSFET with enhanced generation 1, NTC and PressFIT Contact Technology. Summary of... | |
| Summary of Features • N-channel - Enhancement mode - Normal level • AEC qualified • MSL1 up to 260°C peak reflow • 100% Avalanche tested • Feasible for automatic optical... | |
| Summary of Features N-channel - Enhancement mode - Logic level AEC qualified MSL1 up to 260°C peak reflow 100% Avalanche tested Feasible for automatic optical inspection (AOI) Designers who used... | |
| Summary of Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested Designers who used this... | |
| Summary of Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified for space applications according to AEC-Q101 standard Benefits Load switch Power conditioning unit Power... | |
| Summary of Features OptiMOS™ 5 - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature... | |
| Summary of Features OptiMOS™ 5 - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature... | |
| Summary of Features OptiMOS™ power MOSFET N-channel MOSFET Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL3 up to 260°C peak reflow 175°C operating... | |
| Summary of Features OptiMOS™-5 - power MOSFET for automotive applications N-channel - Enhancement mode AEC-Q101 qualified MSL1 up to 260°C peak reflow Green Product (RoHS compliant) 100% Avalanche tested | |
| Summary of Features OptiMOS™-5 - power MOSFET for automotive applications N-channel - Enhancement mode AEC-Q101 qualified MSL1 up to 260°C peak reflow Green Product (RoHS compliant) 100% Avalanche tested Applications... | |
| Summary of Features OptiMOS7 40V ™ power MOSFET N-channel MOSFET Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL1 up to 260°C peak reflow... | |
| Summary of Features OptiMOSTM 5 – power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating... | |
| Summary of Features Very low Ron*A High avalanche capability High SOA ruggedness Small gate charges Fast switching times (turn on/off) N-channel - Enhancement mode Extended qualification beyond AEC-Q101 Enhanced electrical... | |
| The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens... | |
| The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS950R08A6P2B comes with a PinFin... | |
| The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS950R08A6P2LB comes with a PinFin... | |
| The HybridPACK™ DC6i is a very compact six-pack module (750V/650A) optimized for hybrid and electrical vehicles This power module complements the benchmark EDT2 IGBT generation with Direct Cooled Base Plate... | |
| The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The direct cooled baseplate with PinFin structure in... | |
| The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS660R08A6P2FB comes with a flat baseplate. | |
| The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2B comes with a baseplate with... | |
| The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2LB comes with a baseplate with... | |
| The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2LB comes with a flat baseplate. | |
| The HybridPACKTM DSC S2 is a very compact half-bridge module targeting Hybrid- and Electric Vehicle applications. The module is based on Infineon’s long-term experience developing IGBT power modules and implements... | |
| The IAUA170N10S5N031 is a 3.1mR 100V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in 48V Auxiliaries like... | |
| The IAUA180N08S5N026 is a 2.6mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in LED Lighting as... | |
| The IAUA180N10S5N029 is a 2.9mR 100V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in 48V Auxiliaries like... | |
| The IAUA220N08S5N021 is a 2.1mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in LED Lighting as... | |
| The IAUA250N08S5N018 is a 1.8mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOSTM 5 technology. Next to others it is used in LED... | |
| The IAUC100N10S5L054 is a 5.4mR 100V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in LED lighting and for... | |
| The IAUC26N10S5L245 is a 24.5mR 100V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in engine management, wireless charging... | |
| The IAUC40N08S5L140 is a 14mR 80V MOSFET in a 5x6 SSO8 package, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in LED lighting and wireless chargers. Summary... | |
| The IAUC50N08S5N102 is a 10.2mR 80V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in DCDC converter and motor... | |
| The IAUC60N10S5L110 is an 11mR 100V MOSFET in a 5x6 SSO8 package, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in LED lighting and DCDC Converters. Summary... | |
| The IAUC64N08S5L075 is a 7.5mR 80V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in LED lighting and for... | |
| The new integrated half-bridge (5mm x 6mm) from Infineon is the innovative and cost efficient package solution for motor drive & body applications. The dual SSO8 5x6 mm2 package... | |
| The new OptiMOS™ 5 technology for 60V MOSFET in the industry standard SSO8 (5x6mm2) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction... | |
| The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard Single SS08 (5x6mm2) small footprint package with leading performance providing low RDSon, Qg and Gate capacitance and minimizing... | |
| The OptiMOS™ 5 technology in the SSO8 (5x6mm2) small footprint package provides leading performance for automotive applications. Summary of Features Copper clips for higher current loading Specifically designed for fast-switching... | |
| The power module implements Infineon’s next generation chip technology EDT3 (Si IGBT) 750V, optimized for electric drive train applications, from mid- to high-range automotive power classes. Summary of Features V... | |
| The power module implements Infineon’s next generation IGBT chip technology 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes. Summary of Features VCES = 1200V,... | |
| The power module implements the new CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications. Summary of Features Electrical Features New semiconductor material - Silicon Carbide Blocking voltage 1200V... | |
| The power module implements the second generation CoolSiC™ Automotive MOSFET 1200 V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and... | |
| The power module implements the second generation CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural... | |
| The power module implements the second generation CoolSiC™ Automotive MOSFET 750V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural... | |
| This HybridPACK™ Drive is a very compact six-pack module (1200V/400A) optimized for hybrid and electric vehicles. The power module implements the new CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive... | |
| This innovative TSC package enables best cooling, high power density optimized system costs An initial portfolio offering starts with 4 products in OptiMOSTM 6 40V and is extended soon. | |
| XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 1.9 mΩ with .XT interconnection technology for decarbonizing transportation. Summary of Features CoolSiC™ MOSFET 3.3 kV Integrated body diode XHP™ 2 housing... | |
| XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 2.5 mΩ with .XT interconnection technology for decarbonizing transportation. Summary of Features CoolSiC™ MOSFET 3.3 kV Integrated body diode XHP™ 2 housing... | |
| XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 3.8 mΩ with .XT interconnection technology for decarbonizing transportation. Summary of Features CoolSiC™ MOSFET 3.3 kV Integrated body diode XHP™ 2 housing... |
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