Infineon Technologies AG Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

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Product Name Notes
100V, N-Ch, 2.4 mΩ max, Automotive MOSFET, sTOLL, OptiMOS™5 The IAUA210N10S5N024 is a 2.4mR 100V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next...
120V, N-Ch, 1.7 mΩ max, Automotive MOSFET, TOLL, OptiMOS™ 5 The IAUTN12S5N017 is a 1.7 mΩ, 120 V MOSFET coming in the TOLL package with Infineon’s leading OptiMOS™ 5 technology.
62 mm 1200 V , 5.5 mΩ half-bridge module with CoolSiC™ MOSFET technology in the well known 62mm housing combined with M1H chip technology and pre-applied Thermal Interface Material (TIM).
62 mm 1200 V, 5.5 mΩ half-bridge module with CoolSiC™ MOSFET technology in the well known 62mm housing combined with M1H chip technology. Also available with pre-applied Thermal Interface Material...
62 mm CoolSiC™ MOSFET common source module 2000 V, 3.5 mΩ G1 in the well known 62mm housing design with M1H chip technology. Summary of Features High current density Low...
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 3.5 mΩ G1 in the well known 62mm housing design with M1H chip technology and pre-applied Thermal Interface Material (TIM). Summary...
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 3.5 mΩ G1 in the well known 62mm housing design with M1H chip technology. Also available with pre-applied Thermal Interface Material...
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 5.2 mΩ G1 in the well known 62mm housing design with M1H chip technology. Also available with pre-applied Thermal Interface Material...
A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications. All of this enables the Best-in-Class...
Applications Belt starter generator 48 V – inverter ISG EV traction inverter Transfer case brushless DC (BLDC) The power module implements the new CoolSiC™ Automotive MOSFET 1200V, optimized for electric...
CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™ 1200 V, 220 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor...
CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor...
CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in a D2PAK-7L package (TO-263-7) build on a state-of-the-art trench semiconductor...
CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process...
CoolSiC™ 1200 V, 14 mΩ SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized...
CoolSiC™ 1200 V, 20 mΩ SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 20 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized...
CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance...
CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 350 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance...
CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance...
CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package CoolSiC™ 1700 V, 1000 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used...
CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package CoolSiC™ 1700 V, 450 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used...
CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used...
CoolSiC™ MOSFET 650 V G2 in Thin-TOLL 8x8 package The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like...
CoolSiC™ MOSFET 650 V G2 in TO-247-3 package The CoolSiC™ MOSFET 650 V, 40 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables...
CoolSiC™ MOSFET 650 V G2 in TO-247-3 package The CoolSiC™ MOSFET 650 V, 50 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables...
CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 15 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and...
CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 20 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and...
CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 40 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and...
CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 50 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and...
CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 7 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and...
CoolSiC™ MOSFET 650 V G2 in TOLT package The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of...
CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that...
CoolSiC™ MOSFET discrete 1200 V, 10 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an...
CoolSiC™ MOSFET discrete 1200 V, 12 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions,...
CoolSiC™ MOSFET discrete 1200 V, 17 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an...
CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions,...
CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an...
CoolSiC™ MOSFET discrete 1200 V, 34 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an...
CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an...
CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions,...
CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an...
CoolSiC™ MOSFET discrete 1200 V, 7 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an...
CoolSiC™ MOSFET discrete 1200 V, 78 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an...
CoolSiC™ MOSFET half-bridge module 1200 V EasyDUAL™ 1B CoolSiC™ MOSFET half-bridge module 1200 V, 8 mΩ G1 with integrated NTC temperature sensor and PressFIT Contact Technology. Summary of Features Best-in-class...
EasyDUAL™ 1B CoolSiC™ MOSFET half-bridge module 1200 V, 55 mΩ with PressFit contact technology and AlN Ceramic. Summary of Features Wide RBSOA Very low stray inductance Enlarged gate drive voltage...
EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 2000 V, 6 mΩ with NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic Summary of Features Best in Class packages with 12mm...
EasyPACK™ 1B CoolSiC™ MOSFET sixpack module 1200 V, 28 mOhm with PressFit contact technology. Summary of Features Wide RBSOA Very low stray inductance Enlarged gate drive voltage window PressFIT pins...
EasyPACK™ 1B CoolSiC™ MOSFET sixpack module 1200 V, 33 mΩ G1 with NTC, PressFIT contact technology and aluminium nitride ceramic. Summary of Features Best-in-class packages with 12.25mm height Leading edge...
EasyPACK™ 1B CoolSiC™ MOSFET sixpack module 1200 V, 33 mOhm with PressFit contact technology. Summary of Features Wide RBSOA Very low stray inductance Enlarged gate drive voltage window PressFIT pins...
EasyPACK™ 1B Modules with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and PressFIT / NTC. Evaluation Board available Summary of Features Increased blocking voltage capability to 650V Low Switching Losses Low...
EasyPACK™ 2B CoolSiC™ MOSFET 1200 V, 13 mΩ six pack module with CoolSiC™ MOSFET enhanced generation 1, integrated NTC temperature sensor and PressFIT contact technology, aluminium nitride ceramic. Summary of...
EasyPACK™ 2B Modules with TRENCHSTOP™ IGBT3, Emitter Controlled 3 diode and PressFIT / NTC. Summary of Features Increased blocking voltage capability to 650V Low Switching Losses Low VCEsat Trench...
HybridPACK™ 1 is an automotive qualified power module designed for Hybrid Electric Vehicle (HEV) applications Summary of Features Complete 3-phase Six-Pack with NTC in one compact module 650V Trench-Field-Stop IGBT3...
HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product derivate FS820R08A6P2LB has long AC power terminals...
HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. Find appropriate Automotive EiceDRIVER™. Summary of Features Blocking Voltage...
HybridPACKTM DSC L 700 V, 200 A six-pack TRENCHSTOPTM IGBT3 including matching diodes with enhanced softness is a very compact IGBT molded module targeting hybrid and electric vehicles.
IAUCN08S7N016T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD...
IAUCN08S7N019T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD...
IAUCN08S7N024T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD...
IAUCN08S7N045T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80 V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2...
IAUCN10S7L180 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm...
IAUCN10S7N040 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm...
IAUCN10S7N074 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm...
Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It...
Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SSO8 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max...
New OptiMOS™-5 40 V Mosfet in sTOLL Package (high power leadless package in 7x8 mm²) for future automotive applications (JEDEC name is MO-319A and IEC name is HSOF-5). sTOLL offers...
New OptiMOS™-5 40 V Mosfet in sTOLL Package (high power leadless package in 7x8 mm2) for future automotive applications (JEDEC name is MO-319A and IEC name is HSOF-5). sTOLL offers...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L006. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L006. Applications Automotive...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L009. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L009 Designers who...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L011. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L011 Applications Automotive...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L014. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L014 Applications Automotive...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L019. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L019 Applications Automotive...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7L028. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7L028 Applications Automotive...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N005. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N005. Applications Automotive...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N009. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N009 Applications Automotive...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N012. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N012 Applications Automatic...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N020. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N020 Applications Automotive...
Say goodbye to old technology and unlock new levels of performance with Infineon's latest product, IAUCN04S7N030. Discover the enhanced efficiency and reliability of our newest technology with IAUCN04S7N030 Applications Automotive...
SiC MOSFET in compact SMD package CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use.
Sixpack 1200 V CoolSiC™ MOSFET Easy Module EasyPACK™ 1B 1200 V / 55 mΩ sixpack module with CoolSiC™ MOSFET with enhanced generation 1, NTC and PressFIT Contact Technology. Summary of...
Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 22 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to...
Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 39 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to...
Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 48 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to...
Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 57 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to...
Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 72 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to...
Summary of Features • N-channel - Enhancement mode - Normal level • AEC qualified • MSL1 up to 260°C peak reflow • 100% Avalanche tested • Feasible for automatic optical...
Summary of Features N-channel - Enhancement mode - Logic level AEC qualified MSL1 up to 260°C peak reflow 100% Avalanche tested Feasible for automatic optical inspection (AOI) Designers who used...
Summary of Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested Designers who used this...
Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Designers who...
Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Applications 48...
Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Applications Automotive...
Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Applications Chassis...
Summary of Features OptiMOS™ 5 - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature...
Summary of Features OptiMOS™ 5 - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature...
Summary of Features OptiMOS™ power MOSFET N-channel MOSFET Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL3 up to 260°C peak reflow 175°C operating...
Summary of Features OptiMOS™-5 - power MOSFET for automotive applications N-channel - Enhancement mode AEC-Q101 qualified MSL1 up to 260°C peak reflow Green Product (RoHS compliant) 100% Avalanche tested
Summary of Features OptiMOS™-5 - power MOSFET for automotive applications N-channel - Enhancement mode AEC-Q101 qualified MSL1 up to 260°C peak reflow Green Product (RoHS compliant) 100% Avalanche tested Applications...
Summary of Features OptiMOS7 40V ™ power MOSFET N-channel MOSFET Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL1 up to 260°C peak reflow...
Summary of Features OptiMOSTM 5 – power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating...
Summary of Features Very low Ron*A High avalanche capability High SOA ruggedness Small gate charges Fast switching times (turn on/off) N-channel - Enhancement mode Extended qualification beyond AEC-Q101 Enhanced electrical...
The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS950R08A6P2B comes with a PinFin...
The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS950R08A6P2LB comes with a PinFin...
The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements. Developed to deliver outstanding levels of power density and...
The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings...
The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles...
The CoolSiC™ MOSFET 650 V, 10 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost...
The CoolSiC™ MOSFET 650 V, 26 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost...
The CoolSiC™ MOSFET 650 V, 33 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost...
The CoolSiC™ MOSFET 650 V, 33 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized,...
The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost...
The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits...
The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC...
The CoolSiC™ MOSFET discrete 1200 V, 234 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design...
The CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design...
The CoolSiC™ MOSFET discrete 1200 V, 34 mΩ G2 in a TO-263-7 (D2PAK-7L) package builds on the strengths of Generation 1 technology and enables the accelerated system design...
The CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design...
The CoolSiC™ MOSFET discrete 1200 V, 78 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design...
The CoolSiC™ MOSFET discrete 1200 V, 8 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design...
The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles...
The CoolSiC™ MOSFET discrete 650 V Generation 2 (G2) in TOLT leverages the G2 best-in-class switching performance while enabling all the benefits of top-side cooling. Complementing the Q-DPAK package, already...
The HybridPACK™ DC6i is a very compact six-pack module (750V/650A) optimized for hybrid and electrical vehicles This power module complements the benchmark EDT2 IGBT generation with Direct Cooled Base Plate...
The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The direct cooled baseplate with PinFin structure in...
The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS660R08A6P2FB comes with a flat baseplate.
The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2B comes with a baseplate with...
The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2LB comes with a baseplate with...
The HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2LB comes with a flat baseplate.
The IAUA170N10S5N031 is a 3.1mR 100V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in 48V Auxiliaries like...
The IAUA180N08S5N026 is a 2.6mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in LED Lighting as...
The IAUA180N10S5N029 is a 2.9mR 100V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in 48V Auxiliaries like...
The IAUA220N08S5N021 is a 2.1mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in LED Lighting as...
The IAUA250N08S5N018 is a 1.8mR 80V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOSTM 5 technology. Next to others it is used in LED...
The IAUC100N10S5L054 is a 5.4mR 100V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in LED lighting and for...
The IAUC26N10S5L245 is a 24.5mR 100V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in engine management, wireless charging...
The IAUC40N08S5L140 is a 14mR 80V MOSFET in a 5x6 SSO8 package, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in LED lighting and wireless chargers. Summary...
The IAUC50N08S5N102 is a 10.2mR 80V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in DCDC converter and motor...
The IAUC60N10S5L110 is an 11mR 100V MOSFET in a 5x6 SSO8 package, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in LED lighting and DCDC Converters. Summary...
The IAUC64N08S5L075 is a 7.5mR 80V MOSFET in a 5x6 mm² SSO8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in LED lighting and for...
The IAUS300N08S5N011 is a 1.1mR 80V MOSFET in a TOLG package with gullwings, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in 48V Main Inverter / Starter...
The IAUS300N08S5N011T is a 1.1mR 80V MOSFET in a TOLT package for Top Side Cooling, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in 48V Main Inverter...
The IAUS300N10S5N014 is a 1.4mR 100V MOSFET in a TOLG package with gullwings, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in 48V Main Inverter / Starter...
The IAUT300N08S5N011 is a 1.1mR 80V MOSFET in a leadless TOLL package, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in 48V Main Inverter / Starter Generators,...
The IAUTN06S5N008 is a 0,76 mΩ, 60V MOSFET coming in the TOLL package with Infineon’s leading OptiMOS™ 5 technology. Next to others the device is designed for HV-LV DCDC converter.
The IAUTN06S5N008G is a 0.78 mΩ, 60 V MOSFET coming in the TOLG package with Infineon’s leading OptiMOS™ 5 technology. Next to other applications, the device is designed for HV-LV...
The IAUTN12S5N018G is a 1.8 mΩ, 120 V MOSFET coming in the TOLG package with Infineon’s leading OptiMOS™ 5 technology. Next to other applications, the device is designed for HV-LV...
The IAUZ30N08S5N186 is a 18.6mR 80V MOSFET in a 3.3 x 3.3 mm² S3O8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in pumps, battery...
The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is...
The IGC033S10S1 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is...
The new integrated half-bridge (5mm x 6mm) from Infineon is the innovative and cost efficient package solution for motor drive & body applications. The dual SSO8 5x6 mm2 package...
The new OptiMOS™ 5 technology for 60V MOSFET in the industry standard SSO8 (5x6mm2) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction...
The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard S3O8 (3x3mm2) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction...
The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard Single SS08 (5x6mm2) small footprint package with leading performance providing low RDSon, Qg and Gate capacitance and minimizing...
The OptiMOS™ 5 technology in the SSO8 (5x6mm2) small footprint package provides leading performance for automotive applications. Summary of Features Copper clips for higher current loading Specifically designed for fast-switching...
The power module implements Infineon’s next generation chip technology EDT3 (Si IGBT) 750V, optimized for electric drive train applications, from mid- to high-range automotive power classes. Summary of Features V...
The power module implements Infineon’s next generation IGBT chip technology 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes. Summary of Features VCES = 1200V,...
The power module implements the new CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications. Summary of Features Electrical Features New semiconductor material - Silicon Carbide Blocking voltage 1200V...
The power module implements the second generation CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural...
The power module implements the second generation CoolSiC™ Automotive MOSFET 750V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural...
This HybridPACK™ Drive is a very compact six-pack module (1200V/400A) optimized for hybrid and electric vehicles. The power module implements the new CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive...
This innovative TSC package enables best cooling, high power density optimized system costs An initial portfolio offering starts with 4 products in OptiMOSTM 6 40V and is extended soon.

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