Infineon Technologies AG Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

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Product Name Notes
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all...
600V CoolMOS™ PFD7 superjunction MOSFET in TO-220 FullPAK narrow-lead package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPAN60R125PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPAN60R125PFD7S in a TO-220...
950 V CoolMOS™ PFD7 superjunction MOSFET in TO-220-3 package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPA95R130PFD7) complements the CoolMOS™ 7 offering for high-power lighting and industrial SMPS applications. The...
A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance,...
Combining a low RDS(on) with a wide safe operating area (SOA) OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear...
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease...
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss...
CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. Summary...
CoolSiC™ 1200 V, 14 mΩ SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized...
CoolSiC™ 1200 V, 20 mΩ SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 20 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized...
CoolSiC™ 1200 V, 40 mΩ SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 40 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized...
CoolSiC™ 1200 V, 7 mΩ SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 7 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized...
CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 220 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance...
CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance...
CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 90 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance...
CoolSiC™ MOSFET 1200 V, 350 mΩ in TO247-4 package build on a state-of-the-art trench semiconductor process is optimized to combine performance with reliability. In comparison to traditional silicon (Si) based...
CoolSiC™ MOSFET 650 V G2 in TO-247-4 package The CoolSiC™ MOSFET 650 V, 40 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables...
CoolSiC™ MOSFET 650 V G2 in TO-247-4 package The CoolSiC™ MOSFET 650 V, 50 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables...
CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that...
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more...
Infineon’s answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS...
Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over...
Infineon's answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market,...
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering...
IPAN60R180CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,...
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need...
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used...
OptiMOS™ 5 100V power MOSFET in D2PAK 7pin package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100V power MOSFET IPB017N10N5 from...
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are...
OptiMOS™ 5 power MOSFET 100 V in a TO-220 FullPAK package Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in...
OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). Summary of...
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2...
StrongIRFET™ 2 single N-channel power MOSFET 40 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 1.25 mOhm, addressing a broad range of...
StrongIRFET™ 2 single N-channel Power MOSFET 40 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 1.45 mOhm, addressing a broad range of...
StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.5 mOhm, addressing a broad range of...
StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.8 mOhm, addressing a broad range of...
StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 60 V features lowest RDS(on) of 1.3 mOhm, addressing a broad range of...
StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.6 mOhm, addressing a broad range of...
The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO-247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si)...
The CoolSiC™ 2000 V 100 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and...
The CoolSiC™ 2000 V 12 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and...
The CoolSiC™ 2000 V 24 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and...
The CoolSiC™ 2000 V 50 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and...
The CoolSiC™ 2000 V 75 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and...
The CoolSiC™ MOSFET 1700 V, 1000 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power...
The CoolSiC™ MOSFET 1700 V, 450 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power...
The CoolSiC™ MOSFET 1700 V, 650 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power...
The CoolSiC™ MOSFET 650 V, 33 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized,...
The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized,...
The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized,...
The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability The CoolSiC™ MOSFET 750 V G1 leverages more than...
The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling...
The CoolSiC™ MOSFET discrete 1200 V, 17 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides...
The CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides...
The CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides...

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