Infineon Technologies AG Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
| Product Name | Notes |
|---|---|
| 120V, N-Ch, 1.7 mΩ max, Automotive MOSFET, TOLL, OptiMOS™ 5 The IAUTN12S5N017 is a 1.7 mΩ, 120 V MOSFET coming in the TOLL package with Infineon’s leading OptiMOS™ 5 technology. | |
| 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all... | |
| A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications. All of this enables the Best-in-Class... | |
| CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss... | |
| CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. Summary... | |
| CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™ 1200 V, 220 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor... | |
| CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor... | |
| CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in a D2PAK-7L package (TO-263-7) build on a state-of-the-art trench semiconductor... | |
| CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process... | |
| CoolSiC™ 1200 V, 14 mΩ SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized... | |
| CoolSiC™ 1200 V, 14 mΩ SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized... | |
| CoolSiC™ 1200 V, 20 mΩ SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 20 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized... | |
| CoolSiC™ 1200 V, 20 mΩ SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 20 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized... | |
| CoolSiC™ 1200 V, 40 mΩ SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 40 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized... | |
| CoolSiC™ 1200 V, 7 mΩ SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 7 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized... | |
| CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance... | |
| CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 350 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance... | |
| CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package The CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance... | |
| CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 220 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance... | |
| CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance... | |
| CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 90 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance... | |
| CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package CoolSiC™ 1700 V, 1000 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used... | |
| CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package CoolSiC™ 1700 V, 450 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used... | |
| CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used... | |
| CoolSiC™ MOSFET 1200 V, 350 mΩ in TO247-4 package build on a state-of-the-art trench semiconductor process is optimized to combine performance with reliability. In comparison to traditional silicon (Si) based... | |
| CoolSiC™ MOSFET 650 V G2 in Thin-TOLL 8x8 package The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like... | |
| CoolSiC™ MOSFET 650 V G2 in TO-247-3 package The CoolSiC™ MOSFET 650 V, 40 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables... | |
| CoolSiC™ MOSFET 650 V G2 in TO-247-3 package The CoolSiC™ MOSFET 650 V, 50 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables... | |
| CoolSiC™ MOSFET 650 V G2 in TO-247-4 package The CoolSiC™ MOSFET 650 V, 40 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables... | |
| CoolSiC™ MOSFET 650 V G2 in TO-247-4 package The CoolSiC™ MOSFET 650 V, 50 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables... | |
| CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 15 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and... | |
| CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 20 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and... | |
| CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 40 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and... | |
| CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 50 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and... | |
| CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 7 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and... | |
| CoolSiC™ MOSFET 650 V G2 in TOLT package The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of... | |
| CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that... | |
| CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that... | |
| CoolSiC™ MOSFET discrete 1200 V, 10 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 12 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions,... | |
| CoolSiC™ MOSFET discrete 1200 V, 17 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions,... | |
| CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 34 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions,... | |
| CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 7 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| CoolSiC™ MOSFET discrete 1200 V, 78 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an... | |
| IAUCN08S7N016T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD... | |
| IAUCN08S7N019T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD... | |
| IAUCN08S7N024T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD... | |
| IAUCN08S7N045T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80 V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2... | |
| IAUCN10S7L180 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm... | |
| IAUCN10S7N040 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm... | |
| IAUCN10S7N074 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm... | |
| Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It... | |
| Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering... | |
| Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need... | |
| OptiMOS™ 5 power MOSFET 100 V in a TO-220 FullPAK package Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in... | |
| SiC MOSFET in compact SMD package CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. | |
| Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 22 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to... | |
| Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 39 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to... | |
| Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 48 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to... | |
| Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 57 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to... | |
| Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 72 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Designers who... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Applications 48... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Applications Automotive... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Applications Chassis... | |
| Summary of Features OptiMOS™ 5 - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature... | |
| Summary of Features OptiMOS™ 5 - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature... | |
| The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO-247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si)... | |
| The CoolSiC™ 2000 V 100 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and... | |
| The CoolSiC™ 2000 V 12 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and... | |
| The CoolSiC™ 2000 V 24 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and... | |
| The CoolSiC™ 2000 V 50 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and... | |
| The CoolSiC™ 2000 V 75 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and... | |
| The CoolSiC™ MOSFET 1700 V, 1000 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power... | |
| The CoolSiC™ MOSFET 1700 V, 450 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power... | |
| The CoolSiC™ MOSFET 1700 V, 650 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power... | |
| The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements. Developed to deliver outstanding levels of power density and... | |
| The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings... | |
| The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles... | |
| The CoolSiC™ MOSFET 650 V, 10 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost... | |
| The CoolSiC™ MOSFET 650 V, 26 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost... | |
| The CoolSiC™ MOSFET 650 V, 33 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost... | |
| The CoolSiC™ MOSFET 650 V, 33 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized,... | |
| The CoolSiC™ MOSFET 650 V, 33 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized,... | |
| The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost... | |
| The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized,... | |
| The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized,... | |
| The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability The CoolSiC™ MOSFET 750 V G1 leverages more than... | |
| The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling... | |
| The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits... | |
| The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC... | |
| The CoolSiC™ MOSFET discrete 1200 V, 17 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides... | |
| The CoolSiC™ MOSFET discrete 1200 V, 234 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 1200 V, 34 mΩ G2 in a TO-263-7 (D2PAK-7L) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides... | |
| The CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides... | |
| The CoolSiC™ MOSFET discrete 1200 V, 78 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 1200 V, 8 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design... | |
| The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles... | |
| The CoolSiC™ MOSFET discrete 650 V Generation 2 (G2) in TOLT leverages the G2 best-in-class switching performance while enabling all the benefits of top-side cooling. Complementing the Q-DPAK package, already... | |
| The IAUS300N08S5N011 is a 1.1mR 80V MOSFET in a TOLG package with gullwings, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in 48V Main Inverter / Starter... | |
| The IAUS300N08S5N011T is a 1.1mR 80V MOSFET in a TOLT package for Top Side Cooling, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in 48V Main Inverter... | |
| The IAUS300N10S5N014 is a 1.4mR 100V MOSFET in a TOLG package with gullwings, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in 48V Main Inverter / Starter... | |
| The IAUT300N08S5N011 is a 1.1mR 80V MOSFET in a leadless TOLL package, using Infineon’s leading OptiMOS™-5 technology. Next to others it is used in 48V Main Inverter / Starter Generators,... | |
| The IAUTN06S5N008 is a 0,76 mΩ, 60V MOSFET coming in the TOLL package with Infineon’s leading OptiMOS™ 5 technology. Next to others the device is designed for HV-LV DCDC converter. | |
| The IAUTN06S5N008G is a 0.78 mΩ, 60 V MOSFET coming in the TOLG package with Infineon’s leading OptiMOS™ 5 technology. Next to other applications, the device is designed for HV-LV... | |
| The IAUTN12S5N018G is a 1.8 mΩ, 120 V MOSFET coming in the TOLG package with Infineon’s leading OptiMOS™ 5 technology. Next to other applications, the device is designed for HV-LV... | |
| The IAUZ30N08S5N186 is a 18.6mR 80V MOSFET in a 3.3 x 3.3 mm² S3O8 package, using Infineon’s leading OptiMOS™ 5 technology. Next to others it is used in pumps, battery... | |
| The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is... | |
| The IGC033S10S1 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is... | |
| The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard S3O8 (3x3mm2) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction... |
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