Infineon Technologies AG Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
| Product Name | Notes |
|---|---|
| 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all... | |
| 600V CoolMOS™ PFD7 superjunction MOSFET in TO-220 FullPAK narrow-lead package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPAN60R125PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPAN60R125PFD7S in a TO-220... | |
| 950 V CoolMOS™ PFD7 superjunction MOSFET in TO-220-3 package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPA95R130PFD7) complements the CoolMOS™ 7 offering for high-power lighting and industrial SMPS applications. The... | |
| A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance,... | |
| Combining a low RDS(on) with a wide safe operating area (SOA) OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear... | |
| CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease... | |
| CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss... | |
| CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. Summary... | |
| CoolSiC™ 1200 V, 14 mΩ SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized... | |
| CoolSiC™ 1200 V, 20 mΩ SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 20 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized... | |
| CoolSiC™ 1200 V, 40 mΩ SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 40 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized... | |
| CoolSiC™ 1200 V, 7 mΩ SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 7 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized... | |
| CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 220 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance... | |
| CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance... | |
| CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package The CoolSiC™ 1200 V, 90 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance... | |
| CoolSiC™ MOSFET 1200 V, 350 mΩ in TO247-4 package build on a state-of-the-art trench semiconductor process is optimized to combine performance with reliability. In comparison to traditional silicon (Si) based... | |
| CoolSiC™ MOSFET 650 V G2 in TO-247-4 package The CoolSiC™ MOSFET 650 V, 40 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables... | |
| CoolSiC™ MOSFET 650 V G2 in TO-247-4 package The CoolSiC™ MOSFET 650 V, 50 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables... | |
| CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that... | |
| Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more... | |
| Infineon’s answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS... | |
| Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ | |
| Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over... | |
| Infineon's answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market,... | |
| Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering... | |
| IPAN60R180CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need... | |
| OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used... | |
| OptiMOS™ 5 100V power MOSFET in D2PAK 7pin package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100V power MOSFET IPB017N10N5 from... | |
| OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are... | |
| OptiMOS™ 5 power MOSFET 100 V in a TO-220 FullPAK package Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in... | |
| OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). Summary of... | |
| Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2... | |
| StrongIRFET™ 2 single N-channel power MOSFET 40 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 1.25 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel Power MOSFET 40 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 1.45 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.5 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.8 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 60 V features lowest RDS(on) of 1.3 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.6 mOhm, addressing a broad range of... | |
| The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO-247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si)... | |
| The CoolSiC™ 2000 V 100 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and... | |
| The CoolSiC™ 2000 V 12 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and... | |
| The CoolSiC™ 2000 V 24 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and... | |
| The CoolSiC™ 2000 V 50 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and... | |
| The CoolSiC™ 2000 V 75 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and... | |
| The CoolSiC™ MOSFET 1700 V, 1000 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power... | |
| The CoolSiC™ MOSFET 1700 V, 450 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power... | |
| The CoolSiC™ MOSFET 1700 V, 650 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power... | |
| The CoolSiC™ MOSFET 650 V, 33 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized,... | |
| The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized,... | |
| The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized,... | |
| The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability The CoolSiC™ MOSFET 750 V G1 leverages more than... | |
| The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling... | |
| The CoolSiC™ MOSFET discrete 1200 V, 17 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides... | |
| The CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides... | |
| The CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides... |
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