Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB034N03L G IPB034N03L G

Description
Manufacturer: Infineon Technologies Win Source Part Number: 109097-IPB034N03L G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 94W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 51nC @ 10V Max Input Capacitance: 5300pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.4 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 109097-IPB034N03L G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 94W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 51nC @ 10V Max Input Capacitance: 5300pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.4 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB034N03L G - 109097-IPB034N03L G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB034N03L G
109097-IPB034N03L G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB034N03L G 109097-IPB034N03L G
Manufacturer: Infineon Technologies Win Source Part Number: 109097-IPB034N03L G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 94W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 51nC @ 10V Max Input Capacitance: 5300pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.4 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 109097-IPB034N03L G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 94W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 5300pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.4 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 109097-IPB034N03L G IPB034N03L G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB034N03L G MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 94000 milliwatts
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