Infineon Technologies AG Single FETs, MOSFETs BSP171PH6327XTSA1

Description
P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Request a Quote Datasheet
Description
P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Request a Quote Datasheet

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Product
Description
Supplier Links
Single FETs, MOSFETs - BSP171PH6327XTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSP171PH6327XTSA1TR-ND
Single FETs, MOSFETs BSP171PH6327XTSA1TR-ND
P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

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Single FETs, MOSFETs - BSP171PH6327XTSA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSP171PH6327XTSA1DKR-ND
Single FETs, MOSFETs BSP171PH6327XTSA1DKR-ND
P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

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Single FETs, MOSFETs - BSP171PH6327XTSA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSP171PH6327XTSA1CT-ND
Single FETs, MOSFETs BSP171PH6327XTSA1CT-ND
P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP171PH6327XTSA1 - 103116-BSP171PH6327XTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP171PH6327XTSA1
103116-BSP171PH6327XTSA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP171PH6327XTSA1 103116-BSP171PH6327XTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 103116-BSP171PH6327X TSA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.9A (Ta) Gate-Source Threshold Voltage: 2V @ 460μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 460pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 300 mOhm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 103116-BSP171PH6327XTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.9A (Ta)
Gate-Source Threshold Voltage: 2V @ 460μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 460pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 300 mOhm @ 1.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

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 - BSP171PH6327XTSA1 - Rochester Electronics
Newburyport, MA, United States
250V-600V Small Signal/Small Power MOSFET

250V-600V Small Signal/Small Power MOSFET

Supplier's Site Datasheet
Singapore, Singapore
60V 1.9A MOSFET Transistor
278-BSP171PH6327XTSA1
60V 1.9A MOSFET Transistor 278-BSP171PH6327XTSA1
MOSFET P-CH 60V 1.9A SOT223-4 Product overview: BSP171PH6327XTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 1.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSP171PH6327XTSA 1 can be used for catalog matching and distributor lookup.

MOSFET P-CH 60V 1.9A SOT223-4 Product overview: BSP171PH6327XTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 1.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSP171PH6327XTSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSP171PH6327XTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSP171PH6327XTSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSP171PH6327XTSA1
MOSFET P-CH 60V 1.9A SOT223-4

MOSFET P-CH 60V 1.9A SOT223-4

Supplier's Site
Single FETs, MOSFETs - BSP171PH6327XTSA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BSP171PH6327XTSA1
Single FETs, MOSFETs BSP171PH6327XTSA1
MOSFET P-CH 60V 1.9A SOT223-4

MOSFET P-CH 60V 1.9A SOT223-4

Supplier's Site Datasheet
Mosfet, P-Ch, 60V, 1.9A, Sot-223; Channel Type Infineon - 68AC4413 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 60V, 1.9A, Sot-223; Channel Type Infineon
68AC4413
Mosfet, P-Ch, 60V, 1.9A, Sot-223; Channel Type Infineon 68AC4413
MOSFET, P-CH, 60V, 1.9A, SOT-223; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes

MOSFET, P-CH, 60V, 1.9A, SOT-223; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET P-Ch -60V 1.9A SOT-223-3

MOSFET P-Ch -60V 1.9A SOT-223-3

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Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSP171PH6327XTSA1TR-ND 103116-BSP171PH6327XTSA1 BSP171PH6327XTSA1 278-BSP171PH6327XTSA1 BSP171PH6327XTSA1 BSP171PH6327XTSA1 68AC4413 BSP171PH6327XTSA1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP171PH6327XTSA1 60V 1.9A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs Mosfet, P-Ch, 60V, 1.9A, Sot-223; Channel Type Infineon MOSFET
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel; P-Channel
Package Type TO-261-4, TO-261AA SOT3; PG-SOT223-4 PG-SOT223-4 Tape & Reel (TR) Surface Mount TO-261-4, TO-261AA TO-3; SOT223
Transistor Grade / Operating Range Automotive
V(BR)DSS 60 volts 60 volts 60 volts
PD 1800 milliwatts 1.8 milliwatts 1800 milliwatts
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