Ampleon Discrete Semiconductor Products - Transistors - FETs, MOSFETs BLF879PS,112

Description
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
  • BLF879PS,112 - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BLF879PS,112 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- BLF879PS,112 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
BLF879PS,112
BLF879PS,112
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BLF879PS,112 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BLF879PS,112
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BLF879PS,112
RF MOSFET LDMOS 42V SOT539B

RF MOSFET LDMOS 42V SOT539B

Supplier's Site

Technical Specifications

  Rochester Electronics Acme Chip Technology Co., Limited
Product Category Power MOSFET RF Transistors
Product Number BLF879PS,112 BLF879PS,112
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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