RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Manufacturer: Ampleon USA Inc.
Win Source Part Number: 770108-BLF578XR,112
Packaging: Tray
Package: SOT539A
Frequency: 225MHz
Current - Test: 40mA
Gain: 23.5dB
Transistor Type: LDMOS (Dual), Common Source
Voltage - Test: 50V
Power - Output: 1400W
Family Name: BLF578XR
Categories: Discrete Semiconductor Products
Manufacturer Package: SOT539A
Voltage Rating DC: 110V
Alternative Parts (Cross-Reference): BLF578XR;
Introduction Date: December 07, 2015
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2030
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
RF Mosfet LDMOS (Dual), Common Source 50V 40mA 225MHz 23.5dB 1400W SOT539A
| Rochester Electronics | Win Source Electronics | DigiKey | |
|---|---|---|---|
| Product Category | Power MOSFET | RF MOSFET Transistors | Transistors |
| Product Number | BLF578XR,112 | 770108-BLF578XR,112 | 568-12823-ND |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLF578XR,112 | RF FETs, MOSFETs | |
| Polarity | N-Channel | ||
| Package Type | SOT539 | SOT3 | SOT-539A |
| Packing Method | Tray | Tray; Tray |