RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Manufacturer: Ampleon USA Inc.
Win Source Part Number: 1023430-BLC8G27LS-18
Packaging: Reel - TR
Voltage Rating: 65V
Frequency: 2.5GHz to 2.69GHz
Current - Test: 200mA
Gain: 14dB
Transistor Polarity: LDMOS (Dual), Common Source
Voltage - Test: 28V
Power - Output: 28W
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: 6-DFM
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
RF Mosfet LDMOS (Dual), Common Source 28V 200mA 2.5GHz ~ 2.69GHz 14dB 28W SOT-1275-3
RF MOSFET LDMOS 28V SOT1275-3
| Rochester Electronics | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Transistors | RF Transistors |
| Product Number | BLC8G27LS-180AVY | 1023430-BLC8G27LS-180AVY | 568-12767-2-ND | BLC8G27LS-180AVY |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLC8G27LS-180AVY | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | LDMOS (Dual), Common Source |
