Bipolar (BJT) Transistor NPN 80V 10A 1.5MHz 90W Through Hole TO-220
Win Source Part Number: 1171261-BD809G
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 50
Power - Max: 90 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 300mA, 3A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V
Frequency - Transition: 1.5MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): BD809G.;
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: BD809G-ND,BD809GOS,2
Base Product Number: BD809
Product Status: Obsolete
Power Bipolar Transistor, 10A, 80V, NPN, TO-220AB, 3 Pin
TRANS NPN 80V 10A TO220
Bipolar Transistors - BJT 10A 80V 90W NPN
| DigiKey | Win Source Electronics | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Power MOSFET | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | BD809GOS-ND | 1171261-BD809G | BD809G | BD809G | BD809G |
| Product Name | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT | |
| Polarity | NPN | NPN | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 | TO-220; TO-220AB | ||
| IC(max) | 10000 milliamps | 10000 milliamps | |||
| Power Gain | 15 dB | ||||
| Operating Frequency | 1.5 MHz |
