onsemi Single Bipolar Transistors BD809G

Bipolar (BJT) Transistor NPN 80V 10A 1.5MHz 90W Through Hole TO-220

Win Source Part Number: 1171261-BD809G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tube
Standard Package: 50
Power - Max: 90 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 300mA, 3A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V
Frequency - Transition: 1.5MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): BD809G.;
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: BD809G-ND,BD809GOS,2156-BD809G-OS,ONSONSBD809G
Base Product Number: BD809
Product Status: Obsolete

NPN BJT 80V 10A TO-220 Power Transistor Product overview: BD809G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 10A, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 10A, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD809G can be used for catalog matching and distributor lookup.

Power Bipolar Transistor, 10A, 80V, NPN, TO-220AB, 3 Pin