Ampleon RF FETs, MOSFETs BLC10G22LS-240PVTZ

The BLC10G22LS-240PVT is a power LDMOS transistor designed for RF applications, specifically optimized for base station use within the frequency range of 2110 MHz to 2200 MHz. It has a rated output power of 60 W and operates efficiently with a drain efficiency of up to 30%. The device features a power gain of 19.7 dB and is internally matched for ease of use, which simplifies integration into RF power amplifier designs. This transistor is characterized by its excellent ruggedness, low thermal resistance, and high efficiency, making it suitable for multi-carrier applications. It can withstand significant load mismatches, with a VSWR of up to 10:1 under specified conditions. The maximum drain-source voltage is 65 V, and it has a gate-source threshold voltage ranging from 1.5 V to 2.0 V. The device is packaged in a SOT-1275-3 case and includes integrated ESD protection. Engineers considering this product should note its compliance with RoHS directives and its suitability for applications requiring robust performance in demanding environments.