Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSF024N03LT3G BSF024N03LT3G

The BSF024N03LT3G is an OptiMOS™3 power MOSFET designed for high-switching-frequency DC/DC converters. It is packaged in a low-profile CanPAK™ S package with a height of less than 0.7 mm and is compatible with the DirectFET® ST footprint. The device has a drain-source voltage rating of 30 V, a continuous drain current of 106 A at 25°C, and a maximum on-resistance of 2.4 mΩ at VGS = 10 V. It supports 100% avalanche testing and double-sided cooling, with a thermal resistance from junction to case of 1.0 K/W on the bottom side. The part is RoHS compliant and qualified to JEDEC standards J-STD-20 and JESD22.