NXP Semiconductors Discrete Semiconductor Products - Transistors - FETs, MOSFETs BLD6G22LS-50,112

Description
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
  • BLD6G22LS-50,112 - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BLD6G22LS-50,112 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- BLD6G22LS-50,112 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
BLD6G22LS-50,112
BLD6G22LS-50,112
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BLD6G22LS-50,112 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BLD6G22LS-50,112
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BLD6G22LS-50,112
RF MOSFET LDMOS 28V CDFM4

RF MOSFET LDMOS 28V CDFM4

Supplier's Site

Technical Specifications

  Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET RF Transistors
Product Number BLD6G22LS-50,112 BLD6G22LS-50,112
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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