Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC889N03MSGATMA1 BSC889N03MSGATMA1

Power Field-Effect Transistor, 12A, 30V, 0.0091ohm, N-Channel, MOSFET

Manufacturer: Infineon Technologies
Win Source Part Number: 101876-BSC889N03MSGATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta) 44A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 1500pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.1 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

N-Channel 30V 12A (Ta) 44A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount PG-TDSON-8-1

MOSFET N-CH 30V 12A 44A TDSON Product overview: BSC889N03MSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A, 44A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, 44A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC889N03MSGATMA1 can be used for catalog matching and distributor lookup.