Ampleon BLL1214-250

BLL1214-250 is a silicon N-channel lateral D-MOS transistor for L-band radar applications from 1200 to 1400 MHz, in a 2-lead flange package (SOT502A) with the source connected to the mounting flange. It operates in pulsed class-AB mode with a maximum drain-source voltage of 75 V and power dissipation of 400 W under 1 ms, 10% duty cycle. The device delivers a power gain greater than 42 dB and efficiency exceeding 12% at 250 W output. Thermal impedance from junction to heatsink is 0.17 K/W under RF conditions. It withstands load mismatch up to VSWR=3:1 across the band. The maximum junction temperature is 200 °C. It meets IEC 60134 for absolute maximum ratings and is supplied in anti-static packaging. No other qualification standards are stated.