Ampleon BLF6G15LS-250PBRN:

Description
Power LDMOS transistor
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Description
Power LDMOS transistor
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Datasheet
Datasheet Summary
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BLF6G15LS-250PBRN is a 250W LDMOS power transistor designed for base station applications in the 1450 MHz to 1550 MHz frequency range. It is packaged in an earless flanged LDMOST ceramic case (SOT1110B) with 8 leads. The device operates with a drain-source voltage up to 65 V and a maximum case temperature of 125 °C. Typical performance includes 60 W average output power, 18.5 dB power gain, 34% drain efficiency, and −30 dBc ACPR under 2-carrier W-CDMA conditions at 28 V supply and 1410 mA quiescent current. It features integrated ESD protection, current sense, and robustness to a VSWR of 10:1. The part is RoHS compliant and has a thermal resistance from junction to case of 0.29 K/W.

Datasheet Summary
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BLF6G15LS-250PBRN is a 250W LDMOS power transistor designed for base station applications in the 1450 MHz to 1550 MHz frequency range. It is packaged in an earless flanged LDMOST ceramic case (SOT1110B) with 8 leads. The device operates with a drain-source voltage up to 65 V and a maximum case temperature of 125 °C. Typical performance includes 60 W average output power, 18.5 dB power gain, 34% drain efficiency, and −30 dBc ACPR under 2-carrier W-CDMA conditions at 28 V supply and 1410 mA quiescent current. It features integrated ESD protection, current sense, and robustness to a VSWR of 10:1. The part is RoHS compliant and has a thermal resistance from junction to case of 0.29 K/W.

Suppliers

Company
Product
Description
Supplier Links
 - BLF6G15LS-250PBRN: - Rochester Electronics
Newburyport, MA, United States
Power LDMOS transistor

Power LDMOS transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number BLF6G15LS-250PBRN:
Package Type SOT1110B
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