Ampleon BLF175C

Description
HF/VHF power MOS transistor
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Description
HF/VHF power MOS transistor
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Datasheet
Datasheet Summary
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HF/VHF power MOS transistor in a 4-lead SOT123A flange package with ceramic cap, designed for Class-A and Class-AB amplification in the HF/VHF range. Features gold metallization, full load mismatch tolerance, and a silicon N-channel vertical D-MOS structure. All leads are isolated from the flange. Contains beryllium oxide and requires safe handling and disposal as hazardous waste. Operates at up to 108 MHz with 30 W output power in Class-B mode at 50 V drain-source voltage.

Datasheet Summary
Powered by GS/AI

HF/VHF power MOS transistor in a 4-lead SOT123A flange package with ceramic cap, designed for Class-A and Class-AB amplification in the HF/VHF range. Features gold metallization, full load mismatch tolerance, and a silicon N-channel vertical D-MOS structure. All leads are isolated from the flange. Contains beryllium oxide and requires safe handling and disposal as hazardous waste. Operates at up to 108 MHz with 30 W output power in Class-B mode at 50 V drain-source voltage.

Suppliers

Company
Product
Description
Supplier Links
 - BLF175C - Rochester Electronics
Newburyport, MA, United States
HF/VHF power MOS transistor

HF/VHF power MOS transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number BLF175C
Package Type SOT-123
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