Win Source Part Number: 1048916-BSC018NE2LSA
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8-1
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): FDMS7656AS; FDMS7560S; FDMS8018; IRF8301MTRPBF; FDMC7660DC; BSC020N03LSGATMA1; BSC016N03MSGATMA1BSC
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000756336,BSC018NE
Base Product Number: BSC018
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1
N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1
N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1
Power Field-Effect Transistor, 29A I(D), 25V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 25V 29A/100A TDSON Product overview: BSC018NE2LSATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 29A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 29A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC018NE2LSATMA1
MOSFET N-CH 25V 29A/100A TDSON
MOSFET N-CH 25V 100A TDSON-8
| Win Source Electronics | RS Components, Ltd. | DigiKey | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1048916-BSC018NE2LSATMA1 | 2735233 | BSC018NE2LSATMA1CT-ND | BSC018NE2LSATMA1 | 278-BSC018NE2LSATMA1 | BSC018NE2LSATMA1 | 376-BSC018NE2LSATMA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | IGBTs | Single FETs, MOSFETs | 25V 29A 100A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 25V 100A TDSON-8 | |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| PD | 2500 to 69000 milliwatts | 2500 milliwatts | 69000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3 | PG-TDSON-8 | 8-PowerTDFN | PG-TDSON-8 | Tape & Reel (TR) | Surface Mount | |
| Number of units in IC | 1 | 1 |