Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single BSC018NE2LSATMA1

Description
Win Source Part Number: 1048916-BSC018NE2LSA TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel Standard Package: 5,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: PG-TDSON-8-1 Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): FDMS7656AS; FDMS7560S; FDMS8018; IRF8301MTRPBF; FDMC7660DC; BSC020N03LSGATMA1; BSC016N03MSGATMA1BSC 018NE2LS; ECCN: EAR99 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000756336,BSC018NE 2LSCT-ND,BSC018NE2LS -ND,BSC018NE2LSATMA1 DKR,BSC018NE2LSATMA1 TR,BSC018NE2LSTR-ND, BSC018NE2LSCT,BSC018 NE2LSDKR-ND,BSC018NE 2LSATMA1CT,BSC018NE2 LS,BSC018NE2LSDKR Base Product Number: BSC018 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1048916-BSC018NE2LSA TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel Standard Package: 5,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: PG-TDSON-8-1 Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): FDMS7656AS; FDMS7560S; FDMS8018; IRF8301MTRPBF; FDMC7660DC; BSC020N03LSGATMA1; BSC016N03MSGATMA1BSC 018NE2LS; ECCN: EAR99 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000756336,BSC018NE 2LSCT-ND,BSC018NE2LS -ND,BSC018NE2LSATMA1 DKR,BSC018NE2LSATMA1 TR,BSC018NE2LSTR-ND, BSC018NE2LSCT,BSC018 NE2LSDKR-ND,BSC018NE 2LSATMA1CT,BSC018NE2 LS,BSC018NE2LSDKR Base Product Number: BSC018 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1048916-BSC018NE2LSATMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1048916-BSC018NE2LSATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1048916-BSC018NE2LSATMA1
Win Source Part Number: 1048916-BSC018NE2LSA TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel Standard Package: 5,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: PG-TDSON-8-1 Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): FDMS7656AS; FDMS7560S; FDMS8018; IRF8301MTRPBF; FDMC7660DC; BSC020N03LSGATMA1; BSC016N03MSGATMA1BSC 018NE2LS; ECCN: EAR99 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000756336,BSC018NE 2LSCT-ND,BSC018NE2LS -ND,BSC018NE2LSATMA1 DKR,BSC018NE2LSATMA1 TR,BSC018NE2LSTR-ND, BSC018NE2LSCT,BSC018 NE2LSDKR-ND,BSC018NE 2LSATMA1CT,BSC018NE2 LS,BSC018NE2LSDKR Base Product Number: BSC018 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1048916-BSC018NE2LSATMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8-1
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): FDMS7656AS; FDMS7560S; FDMS8018; IRF8301MTRPBF; FDMC7660DC; BSC020N03LSGATMA1; BSC016N03MSGATMA1BSC018NE2LS;
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000756336,BSC018NE2LSCT-ND,BSC018NE2LS-ND,BSC018NE2LSATMA1DKR,BSC018NE2LSATMA1TR,BSC018NE2LSTR-ND,BSC018NE2LSCT,BSC018NE2LSDKR-ND,BSC018NE2LSATMA1CT,BSC018NE2LS,BSC018NE2LSDKR
Base Product Number: BSC018
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
IGBTs - 2735233 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
2735233
IGBTs 2735233
Infineon BSC018NE2LSATMA1

Infineon BSC018NE2LSATMA1

Supplier's Site
IGBTs - 2735234 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
2735234
IGBTs 2735234
Infineon BSC018NE2LSATMA1

Infineon BSC018NE2LSATMA1

Supplier's Site
Single FETs, MOSFETs - BSC018NE2LSATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC018NE2LSATMA1CT-ND
Single FETs, MOSFETs BSC018NE2LSATMA1CT-ND
N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1

N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1

Buy Now Datasheet
Single FETs, MOSFETs - BSC018NE2LSATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC018NE2LSATMA1DKR-ND
Single FETs, MOSFETs BSC018NE2LSATMA1DKR-ND
N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1

N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1

Buy Now Datasheet
Single FETs, MOSFETs - BSC018NE2LSATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC018NE2LSATMA1TR-ND
Single FETs, MOSFETs BSC018NE2LSATMA1TR-ND
N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1

N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1

Buy Now Datasheet
 - BSC018NE2LSATMA1 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 29A I(D), 25V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 29A I(D), 25V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Singapore
25V 29A 100A MOSFET Transistor
278-BSC018NE2LSATMA1
25V 29A 100A MOSFET Transistor 278-BSC018NE2LSATMA1
MOSFET N-CH 25V 29A/100A TDSON Product overview: BSC018NE2LSATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 29A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 29A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC018NE2LSATMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 25V 29A/100A TDSON Product overview: BSC018NE2LSATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 29A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 29A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC018NE2LSATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSC018NE2LSATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSC018NE2LSATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSC018NE2LSATMA1
MOSFET N-CH 25V 29A/100A TDSON

MOSFET N-CH 25V 29A/100A TDSON

Supplier's Site
MOSFET N-CH 25V 100A TDSON-8 - 376-BSC018NE2LSATMA1 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 25V 100A TDSON-8
376-BSC018NE2LSATMA1
MOSFET N-CH 25V 100A TDSON-8 376-BSC018NE2LSATMA1
MOSFET N-CH 25V 100A TDSON-8

MOSFET N-CH 25V 100A TDSON-8

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. DigiKey Rochester Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Insulated Gate Bipolar Transistors (IGBT) Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1048916-BSC018NE2LSATMA1 2735233 BSC018NE2LSATMA1CT-ND BSC018NE2LSATMA1 278-BSC018NE2LSATMA1 BSC018NE2LSATMA1 376-BSC018NE2LSATMA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IGBTs Single FETs, MOSFETs 25V 29A 100A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 25V 100A TDSON-8
Polarity N-Channel N-Channel N-Channel
PD 2500 to 69000 milliwatts 2500 milliwatts 69000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 PG-TDSON-8 8-PowerTDFN PG-TDSON-8 Tape & Reel (TR) Surface Mount
Number of units in IC 1 1
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