Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSB012N03LX3G BSB012N03LX3G

The BSB012N03LX3G is a logic-level N-channel MOSFET designed for automotive applications, fabricated using Infineon's DirectFET technology. It is housed in an 8.5 mm × 6.5 mm DirectFET MZ package with a dual-side cooled design for enhanced thermal performance. The device has a maximum drain-source voltage of 30 V, a continuous drain current of 120 A, and a typical on-resistance of 1.2 mΩ at 10 V gate-source voltage. It supports a maximum gate-source voltage of ±20 V and is qualified to AEC-Q200 standards. The device is RoHS-compliant and compatible with surface-mount assembly.