N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1
Manufacturer: Infineon Technologies
Win Source Part Number: 099888-BSC016N03MSGA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 28A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 173nC @ 10V
Max Input Capacitance: 13000pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.6 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
Quantity per package: 5k pcs
MOSFET N-CH 30V 28A/100A TDSON Product overview: BSC016N03MSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 28A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 28A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC016N03MSGATMA
12V-300V N-Channel Power MOSFET
MOSFET N-CH 30V 28A/100A TDSON
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:125W; Operating RoHS Compliant: Yes
MOSFET N-CH 30V 28A/100A TDSON
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BSC016N03MSGATMA1TR-ND | 099888-BSC016N03MSGATMA1 | 278-BSC016N03MSGATMA1 | BSC016N03MSGATMA1 | BSC016N03MSGATMA1 | 60R2473 | BSC016N03MSGATMA1 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC016N03MSGATMA1 | 30V 28A 100A MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N Ch, 100A, 30V, Pg-Tdson-8; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | 8-PowerTDFN | SOT3; PG-TDSON-8 | Tape & Reel (TR) | DFN-8 | 8-PowerTDFN | TO-3 | 8-PowerTDFN |
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| PD | 2500 to 125000 milliwatts | 2500 milliwatts | 2500 milliwatts | 125000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
