onsemi Single Bipolar Transistors BD1396STU

Description
Bipolar (BJT) Transistor NPN 80V 1.5A 1.25W Through Hole TO-126-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 80V 1.5A 1.25W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BD1396STU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD1396STU-ND
Single Bipolar Transistors BD1396STU-ND
Bipolar (BJT) Transistor NPN 80V 1.5A 1.25W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 80V 1.5A 1.25W Through Hole TO-126-3

Buy Now Datasheet
 - BD1396STU - Rochester Electronics
Newburyport, MA, United States
1.5 A, 80 V NPN Power Bipolar Junction Transistor

1.5 A, 80 V NPN Power Bipolar Junction Transistor

Supplier's Site Datasheet
 - BD1396STU - Rochester Electronics
Newburyport, MA, United States
1.5 A, 80 V NPN Power Bipolar Junction Transistor

1.5 A, 80 V NPN Power Bipolar Junction Transistor

Supplier's Site Datasheet
Singapore
80V 1.5A Bipolar Transistor
276-BD1396STU
80V 1.5A Bipolar Transistor 276-BD1396STU
80V 1.5A NPN BJT TO-126 Power Transistor Product overview: BD1396STU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 1.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 1.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD1396STU can be used for catalog matching and distributor lookup.

80V 1.5A NPN BJT TO-126 Power Transistor Product overview: BD1396STU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 1.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 1.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD1396STU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD1396STU - 200956-BD1396STU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD1396STU
200956-BD1396STU
TRANSISTORS - Transistors (BJT) - Single - BD1396STU 200956-BD1396STU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 200956-BD1396STU Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 1.5A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 500mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 40 @ 150mA, 2V Maximum Power Dissipation: 1.25W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Quantity per package: 1,920

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 200956-BD1396STU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 40 @ 150mA, 2V
Maximum Power Dissipation: 1.25W
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Quantity per package: 1,920

Buy Now Datasheet
TRANS NPN 80V 1.5A TO-126 - 598-BD1396STU - Utmel Electronic Limited
Hong Kong, China
TRANS NPN 80V 1.5A TO-126
598-BD1396STU
TRANS NPN 80V 1.5A TO-126 598-BD1396STU
TRANS NPN 80V 1.5A TO-126

TRANS NPN 80V 1.5A TO-126

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD1396STU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD1396STU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD1396STU
TRANS NPN 80V 1.5A TO126-3

TRANS NPN 80V 1.5A TO126-3

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics ERSAELECTRONICS PTE. LTD. Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number BD1396STU-ND BD1396STU 276-BD1396STU 200956-BD1396STU 598-BD1396STU BD1396STU
Product Name Single Bipolar Transistors 80V 1.5A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - BD1396STU TRANS NPN 80V 1.5A TO-126 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN NPN; NPN
Package Type TO-225AA, TO-126-3 TO-126-3 SOT3; TO-126
Packing Method Tube; Tube Tube; Tube
IC(max) 1500 milliamps 1500 milliamps
VCEO 80 volts 80 volts
Unlock Full Specs
to access all available technical data