NXP Semiconductors BUJ303A,127

Description
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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Description
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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Datasheet
Datasheet Summary
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NPN power transistor for high voltage, high speed switching applications in DC-to-DC converters, inverters, and motor control systems, housed in a TO-220AB (SOT78) plastic package with a mounting base connected to the collector. It has a collector-emitter peak voltage of 1000 V, a continuous collector current rating of 5 A, and a total power dissipation of 100 W at 25⁰C. Thermal resistance from junction to mounting base is 1.25 K/W. The device meets IEC 60134 for absolute maximum ratings.

Datasheet Summary
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NPN power transistor for high voltage, high speed switching applications in DC-to-DC converters, inverters, and motor control systems, housed in a TO-220AB (SOT78) plastic package with a mounting base connected to the collector. It has a collector-emitter peak voltage of 1000 V, a continuous collector current rating of 5 A, and a total power dissipation of 100 W at 25⁰C. Thermal resistance from junction to mounting base is 1.25 K/W. The device meets IEC 60134 for absolute maximum ratings.

Suppliers

Company
Product
Description
Supplier Links
 - BUJ303A,127 - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number BUJ303A,127
Package Type SOT78
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