NXP Semiconductors Discrete Semiconductor Products - Transistors - FETs, MOSFETs BLD6G21L-50,112

Description
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
  • BLD6G21L-50,112 - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BLD6G21L-50,112 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- BLD6G21L-50,112 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
BLD6G21L-50,112
BLD6G21L-50,112
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BLD6G21L-50,112 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BLD6G21L-50,112
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BLD6G21L-50,112
RF MOSFET LDMOS 28V CDFM4

RF MOSFET LDMOS 28V CDFM4

Supplier's Site

Technical Specifications

  Rochester Electronics Acme Chip Technology Co., Limited
Product Category Power MOSFET RF Transistors
Product Number BLD6G21L-50,112 BLD6G21L-50,112
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data