Ampleon BLF6G13LS-250P,112

Description
RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
  • BLF6G13LS-250P,112 - Rochester Electronics
    Rochester Electronics
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Description
RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet

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- BLF6G13LS-250P,112 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
BLF6G13LS-250P,112
BLF6G13LS-250P,112
RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number BLF6G13LS-250P,112
Polarity N-Channel
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