onsemi TRANSISTORS - Transistors (BJT) - Single - BD13510STU BD13510STU

1.5 A, 45V NPN Power Bipolar Junction Transistor

1.5 A, 45V NPN Power Bipolar Junction Transistor

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 011248-BD13510STU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 63 @ 150mA, 2V
Maximum Power Dissipation: 1.25W
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 1,920

Bipolar (BJT) Transistor NPN 45V 1.5A 1.25W Through Hole TO-126-3

Bipolar Transistors - BJT NPN Si Transistor Epitaxial Product overview: BD13510STU from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-BD13510STU can be used for catalog matching and distributor lookup.