Ampleon Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF BLF8G20LS-230VU

Description
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
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Description
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
Request a Quote
Datasheet
Datasheet Summary
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The BLF8G20LS-230V is a 230 W LDMOS power transistor designed for RF applications, specifically optimized for base station use within the frequency range of 1800 MHz to 2000 MHz. It features a high efficiency of up to 31.7% and a power gain of 18 dB, making it suitable for multi-standard and multi-carrier applications. The device operates with a drain-source voltage of up to 65 V and a gate-source voltage range of -0.5 V to +13 V. Thermal performance is enhanced by low thermal resistance, providing stability during operation. The transistor is internally matched for ease of use and includes integrated ESD protection. It is compliant with RoHS regulations, ensuring it meets environmental standards. The BLF8G20LS-230V is packaged in a SOT-1239B ceramic package with six leads, making it suitable for various mounting configurations. Engineers considering this product should note its ruggedness, capable of withstanding load mismatches with a VSWR of up to 10:1 under specified conditions. This transistor is particularly advantageous for applications requiring low memory effects and improved performance in Doherty amplifier configurations.

Datasheet Summary
Powered by GS/AI

The BLF8G20LS-230V is a 230 W LDMOS power transistor designed for RF applications, specifically optimized for base station use within the frequency range of 1800 MHz to 2000 MHz. It features a high efficiency of up to 31.7% and a power gain of 18 dB, making it suitable for multi-standard and multi-carrier applications. The device operates with a drain-source voltage of up to 65 V and a gate-source voltage range of -0.5 V to +13 V. Thermal performance is enhanced by low thermal resistance, providing stability during operation. The transistor is internally matched for ease of use and includes integrated ESD protection. It is compliant with RoHS regulations, ensuring it meets environmental standards. The BLF8G20LS-230V is packaged in a SOT-1239B ceramic package with six leads, making it suitable for various mounting configurations. Engineers considering this product should note its ruggedness, capable of withstanding load mismatches with a VSWR of up to 10:1 under specified conditions. This transistor is particularly advantageous for applications requiring low memory effects and improved performance in Doherty amplifier configurations.

Suppliers

Company
Product
Description
Supplier Links
 - BLF8G20LS-230VU - Rochester Electronics
Newburyport, MA, United States
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - 1009767-BLF8G20LS-230VU - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF
1009767-BLF8G20LS-230VU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF 1009767-BLF8G20LS-230VU
Win Source Part Number: 1009767-BLF8G20LS-23 0VU Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Package: Tray Standard Package: 20 Voltage - Rated: 65 V Frequency: 1.81GHz ~ 1.88GHz Current - Test: 1.8 A Gain: 18dB Transistor Type: LDMOS Voltage - Test: 28 V Power - Output: 55W Package / Case: SOT-1239B Supplier Device Package: CDFM6 ECCN: EAR99 Fake Threat In the Open Market: 69 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0075 Mfr: Ampleon USA Inc. Other Names: 934067961112,BLF8G20 LS-230VU-ND,568-1283 3 Base Product Number: BLF8 Product Status: Last Time Buy

Win Source Part Number: 1009767-BLF8G20LS-230VU
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Package: Tray
Standard Package: 20
Voltage - Rated: 65 V
Frequency: 1.81GHz ~ 1.88GHz
Current - Test: 1.8 A
Gain: 18dB
Transistor Type: LDMOS
Voltage - Test: 28 V
Power - Output: 55W
Package / Case: SOT-1239B
Supplier Device Package: CDFM6
ECCN: EAR99
Fake Threat In the Open Market: 69 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0075
Mfr: Ampleon USA Inc.
Other Names: 934067961112,BLF8G20LS-230VU-ND,568-12833
Base Product Number: BLF8
Product Status: Last Time Buy

Buy Now Datasheet
RF FETs, MOSFETs - 568-12833-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
568-12833-ND
RF FETs, MOSFETs 568-12833-ND
RF Mosfet LDMOS 28V 1.8A 1.81GHz ~ 1.88GHz 18dB 55W CDFM6

RF Mosfet LDMOS 28V 1.8A 1.81GHz ~ 1.88GHz 18dB 55W CDFM6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BLF8G20LS-230VU - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BLF8G20LS-230VU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BLF8G20LS-230VU
RF MOSFET LDMOS 28V CDFM6

RF MOSFET LDMOS 28V CDFM6

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey Acme Chip Technology Co., Limited
Product Category Power MOSFET RF MOSFET Transistors Transistors RF Transistors
Product Number BLF8G20LS-230VU 1009767-BLF8G20LS-230VU 568-12833-ND BLF8G20LS-230VU
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF RF FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Package Type SOT1239 SOT3 SOT-1239B SOT123; SOT-1239B
Packing Method Tray Tray
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