The Infineon N-Channel MOSFET, part number BSZ031NE2LS5, is designed for high-performance applications, particularly optimized for buck converters. It operates at a maximum voltage of 25V and can handle a continuous drain current of up to 40A. The device features a low on-resistance of 3.1 mOc at a gate-source voltage of 4.5V, contributing to its efficiency in high-frequency switch mode power supplies (SMPS). The gate charge characteristics are favorable, with a total gate charge (QG) of 6.3 nC and a QOSS of 9.1 nC, which enhances its performance in fast switching applications. The MOSFET is 100% avalanche tested and is compliant with RoHS and halogen-free standards, making it suitable for environmentally conscious designs. The package type is PG-TSDSON-8 FL, which provides a compact footprint for integration into various electronic systems.
MOSFET N-CH 25V 19A/40A TSDSON Product overview: BSZ031NE2LS5ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 19A, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 19A, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSZ031NE2LS5ATMA
OptiMOS 5 Power-MOSFET, 25V
N-Channel 25V 19A (Ta), 40A (Tc) 2.1W (Ta), 30W (Tc) Surface Mount PG-TSDSON-8-FL
N-Channel 25V 19A (Ta), 40A (Tc) 2.1W (Ta), 30W (Tc) Surface Mount PG-TSDSON-8-FL
N-Channel 25V 19A (Ta), 40A (Tc) 2.1W (Ta), 30W (Tc) Surface Mount PG-TSDSON-8-FL
Win Source Part Number: 1381629-BSZ031NE2LS5
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 5,000 pcs
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8-FL
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V
Vgs (Max): ±16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Base Product Number: BSZ031
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
MOSFET N-CH 25V 19A/40A TSDSON
MOSFET, N-CH, 25V, 40A, TSDSON ROHS COMPLIANT: YES
MOSFET N-CH 25V 19A/40A TSDSON
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | Win Source Electronics | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-BSZ031NE2LS5ATMA1 | BSZ031NE2LS5ATMA1 | 448-BSZ031NE2LS5ATMA1CT-ND | 1381629-BSZ031NE2LS5ATMA1 | 2441564 | BSZ031NE2LS5ATMA1 | 80AH9390 | BSZ031NE2LS5ATMA1 | BSZ031NE2LS5ATMA1 |
| Product Name | 25V 19A 40A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 25V, 40A, Tsdson Rohs Compliant Infineon | MOSFET | Single FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 25 volts | 25 volts | |||||||
| Transconductance | 0.0460 kS | ||||||||
| PD | 30 milliwatts | 2100 to 30000 milliwatts | 2100 milliwatts |
