MOSFET N-CH 60V 24A/100A TDSON Product overview: BSC028N06NSTATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 24A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 24A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC028N06NSTATMA
N-Channel 60V 24A (Ta), 100A (Tc) 3W (Ta), 100W (Tc) Surface Mount PG-TDSON-8-7
N-Channel 60V 24A (Ta), 100A (Tc) 3W (Ta), 100W (Tc) Surface Mount PG-TDSON-8-7
N-Channel 60V 24A (Ta), 100A (Tc) 3W (Ta), 100W (Tc) Surface Mount PG-TDSON-8-7
Infineon MOSFET BSC028N06NSTATMA1
N-Channel Power MOSFET
Manufacturer: Infineon Technologies
Win Source Part Number: 1325375-BSC028N06NST
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 5,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 24A, 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Power Dissipation (Max): 3W, 100W (Tc)
Supplier Device Package: PG-TDSON-8-7
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: 8-PowerTDFN
ECCN: EAR99
Fake Threat In the Open Market: 77
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 2156-BSC028N06NSTATM
Base Product Number: BSC028
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
RoHS Status: ROHS3 Compliant
MOSFET DIFFERENTIATED MOSFETS
MOSFET, N-CH, 60V, 100A, TDSON; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
MOSFET N-CH 60V 24A/100A TDSON
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | Rochester Electronics | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-BSC028N06NSTATMA1 | BSC028N06NSTATMA1CT-ND | 2207351 | BSC028N06NSTATMA1 | 1325375-BSC028N06NSTATMA1 | BSC028N06NSTATMA1 | 93AC6985 | BSC028N06NSTATMA1 |
| Product Name | 60V 24A 100A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Mosfet, N-Ch, 60V, 100A, Tdson; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | |||||||
| Transconductance | 0.0500 kS | |||||||
| PD | 83 milliwatts | 3000 to 100000 milliwatts |
