BLF8G22LS-270 is a 270W LDMOS power transistor designed for base station applications in the 2110MHz to 2170MHz frequency range. It features an earless flanged ceramic package (SOT502B) with dimensions of 20.70mm x 9.91mm x 4.72mm. The transistor has a maximum drain-source voltage of 65V, a junction temperature rating of 225°C, and a thermal resistance from junction to case of 0.26K/W. It is internally matched, includes integrated ESD protection, and complies with RoHS directives. The device demonstrates high efficiency (up to 30%) and power gain (17.7dB) under 2-carrier W-CDMA conditions at 28V drain voltage and 2400mA quiescent current. It is ruggedized to withstand a VSWR of 10:1 under full power CW operation.
LDMOS RF Power Transistor
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | BLF8G22LS-270,112 |
| Package Type | SOT502B |
