Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP126/S911115 BSP126/S911115

The BSP126 is an N-channel enhancement mode vertical D-MOS transistor in a surface-mounted SOT223 package, designed for high-speed switching applications such as line current interruptors and relay drivers. It has a drain-source voltage rating of 250 V and a continuous drain current of 375 mA, with a maximum total power dissipation of 1.5 W at 25°C junction temperature. Thermal resistance from junction to ambient is 83.3 K/W when mounted on a 40 × 40 × 1.5 mm PCB with a minimum 6 cm² drain pad. The gate-source threshold voltage ranges from 0.8 V to 2 V, and the drain-source on-state resistance is typically 2.8 Ω at 300 mA and 10 V gate-source bias. The device meets the Absolute Maximum Rating System (IEC 60134) and is rated for a junction temperature up to 150°C and a storage temperature range from −55°C to +150°C.