onsemi Single Bipolar Transistors BD677G

Description
Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-126
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-126
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BD677GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD677GOS-ND
Single Bipolar Transistors BD677GOS-ND
Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-126

Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-126

Buy Now Datasheet
 - BD677G - Rochester Electronics
Newburyport, MA, United States
Medium Power NPN Darlington Bipolar Power Transistor

Medium Power NPN Darlington Bipolar Power Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD677G - 1023040-BD677G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD677G
1023040-BD677G
TRANSISTORS - Transistors (BJT) - Single - BD677G 1023040-BD677G
Manufacturer: ON Semiconductor Win Source Part Number: 1023040-BD677G Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 2.5V @ 30mA, 1.5A Collector Cut-off Current(Max): 500μA Typical Gain (hFE) (Min): 750 @ 1.5A, 3V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management

Manufacturer: ON Semiconductor
Win Source Part Number: 1023040-BD677G
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 2.5V @ 30mA, 1.5A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 750 @ 1.5A, 3V
Maximum Power Dissipation: 40W
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
TRANS NPN DARL 60V 4A TO225 - 598-BD677G - Utmel Electronic Limited
Hong Kong, China
TRANS NPN DARL 60V 4A TO225
598-BD677G
TRANS NPN DARL 60V 4A TO225 598-BD677G
TRANS NPN DARL 60V 4A TO225

TRANS NPN DARL 60V 4A TO225

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD677G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD677G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD677G
TRANS NPN DARL 60V 4A TO126

TRANS NPN DARL 60V 4A TO126

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Transistors Transistors Bipolar RF Transistors
Product Number BD677GOS-ND BD677G 1023040-BD677G 598-BD677G BD677G
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BD677G TRANS NPN DARL 60V 4A TO225 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Darlington NPN; NPN
Package Type TO-225AA, TO-126-3 TO-225 SOT3; TO-225AA
Packing Method Bulk; Bulk Bulk; Bulk
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