Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single BSC018NE2LSIATMA1

Description
Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Request a Quote Datasheet
Description
Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - BSC018NE2LSIATMA1 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1049662-BSC018NE2LSIATMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1049662-BSC018NE2LSIATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1049662-BSC018NE2LSIATMA1
Win Source Part Number: 1049662-BSC018NE2LSI ATMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel Standard Package: 5,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: PG-TDSON-8-6 Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): BSC014NE2LSIATMA1; FDMS7560S; BSC0911NDATMA1; FDMS3600S; FDMS7558S; BSC032NE2LSATMA1BSC0 18NE2LSI; BSC018NE2LSIXT; ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: BSC018NE2LSIATMA1TR, BSC018NE2LSI-ND,BSC0 18NE2LSIDKR-ND,INFIN FBSC018NE2LSIATMA1,B SC018NE2LSIATMA1DKR, BSC018NE2LSICT-ND,BS C018NE2LSIDKR,BSC018 NE2LSITR-ND,BSC018NE 2LSIATMA1CT,SP000906 030,BSC018NE2LSI,215 6-BSC018NE2LSIATMA1, BSC018NE2LSICT Base Product Number: BSC018 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1049662-BSC018NE2LSIATMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8-6
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): BSC014NE2LSIATMA1; FDMS7560S; BSC0911NDATMA1; FDMS3600S; FDMS7558S; BSC032NE2LSATMA1BSC018NE2LSI; BSC018NE2LSIXT;
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: BSC018NE2LSIATMA1TR,BSC018NE2LSI-ND,BSC018NE2LSIDKR-ND,INFINFBSC018NE2LSIATMA1,BSC018NE2LSIATMA1DKR,BSC018NE2LSICT-ND,BSC018NE2LSIDKR,BSC018NE2LSITR-ND,BSC018NE2LSIATMA1CT,SP000906030,BSC018NE2LSI,2156-BSC018NE2LSIATMA1,BSC018NE2LSICT
Base Product Number: BSC018
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
MOSFETs - 2419668P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2419668P
MOSFETs 2419668P
Infineon BSC018NE2LSIATMA1

Infineon BSC018NE2LSIATMA1

Supplier's Site
MOSFETs - 2419668 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2419668
MOSFETs 2419668
Infineon BSC018NE2LSIATMA1

Infineon BSC018NE2LSIATMA1

Supplier's Site
MOSFETs - 2419667 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2419667
MOSFETs 2419667
Infineon BSC018NE2LSIATMA1

Infineon BSC018NE2LSIATMA1

Supplier's Site
Singapore, Singapore
25V 29A 100A MOSFET Transistor
278-BSC018NE2LSIATMA1
25V 29A 100A MOSFET Transistor 278-BSC018NE2LSIATMA1
MOSFET N-CH 25V 29A/100A TDSON Product overview: BSC018NE2LSIATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 29A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 29A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC018NE2LSIATMA 1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 25V 29A/100A TDSON Product overview: BSC018NE2LSIATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 29A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 29A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC018NE2LSIATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - BSC018NE2LSIATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC018NE2LSIATMA1TR-ND
Single FETs, MOSFETs BSC018NE2LSIATMA1TR-ND
N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6

N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6

Buy Now Datasheet
Single FETs, MOSFETs - BSC018NE2LSIATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC018NE2LSIATMA1DKR-ND
Single FETs, MOSFETs BSC018NE2LSIATMA1DKR-ND
N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6

N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6

Buy Now Datasheet
Single FETs, MOSFETs - BSC018NE2LSIATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC018NE2LSIATMA1CT-ND
Single FETs, MOSFETs BSC018NE2LSIATMA1CT-ND
N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6

N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6

Buy Now Datasheet
Mosfet, N-Ch, 25V, 100A, Tdson; Transistor Polarity Infineon - 34AC1374 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 25V, 100A, Tdson; Transistor Polarity Infineon
34AC1374
Mosfet, N-Ch, 25V, 100A, Tdson; Transistor Polarity Infineon 34AC1374
MOSFET, N-CH, 25V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 25V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power DissipationRoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSC018NE2LSIATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSC018NE2LSIATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSC018NE2LSIATMA1
MOSFET N-CH 25V 29A/100A TDSON

MOSFET N-CH 25V 29A/100A TDSON

Supplier's Site
MOSFET N-CH 25V 29A TDSON-8 - 376-BSC018NE2LSIATMA1 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 25V 29A TDSON-8
376-BSC018NE2LSIATMA1
MOSFET N-CH 25V 29A TDSON-8 376-BSC018NE2LSIATMA1
MOSFET N-CH 25V 29A TDSON-8

MOSFET N-CH 25V 29A TDSON-8

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics RS Components, Ltd. ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSC018NE2LSIATMA1 1049662-BSC018NE2LSIATMA1 2419668P 278-BSC018NE2LSIATMA1 BSC018NE2LSIATMA1TR-ND 34AC1374 BSC018NE2LSIATMA1 376-BSC018NE2LSIATMA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFETs 25V 29A 100A MOSFET Transistor Single FETs, MOSFETs Mosfet, N-Ch, 25V, 100A, Tdson; Transistor Polarity Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 25V 29A TDSON-8
Polarity N-Channel N-Channel N-Channel
rDS(on) 0.0024 ohms 0.0015 ohms 0.0024 ohms
Package Type PG-TDSON-8 SOT3 SuperSO8 5 x 6 Tape & Reel (TR) 8-PowerTDFN TO-3 8-PowerTDFN
Packing Method Tape Reel; Tape & Reel Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR Tape Reel; Tape & Reel (TR)
PD 2500 to 69000 milliwatts 2500 milliwatts 2500 milliwatts
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