Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Win Source Part Number: 1049662-BSC018NE2LSI
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8-6
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): BSC014NE2LSIATMA1; FDMS7560S; BSC0911NDATMA1; FDMS3600S; FDMS7558S; BSC032NE2LSATMA1BSC0
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: BSC018NE2LSIATMA1TR,
Base Product Number: BSC018
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 25V 29A/100A TDSON Product overview: BSC018NE2LSIATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 29A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 29A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC018NE2LSIATMA
N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6
N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6
N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6
MOSFET, N-CH, 25V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 25V 29A/100A TDSON
MOSFET N-CH 25V 29A TDSON-8
| Rochester Electronics | Win Source Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSC018NE2LSIATMA1 | 1049662-BSC018NE2LSIATMA1 | 2419668P | 278-BSC018NE2LSIATMA1 | BSC018NE2LSIATMA1TR-ND | 34AC1374 | BSC018NE2LSIATMA1 | 376-BSC018NE2LSIATMA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | 25V 29A 100A MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 25V, 100A, Tdson; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 25V 29A TDSON-8 | |
| Polarity | N-Channel | N-Channel | N-Channel | |||||
| rDS(on) | 0.0024 ohms | 0.0015 ohms | 0.0024 ohms | |||||
| Package Type | PG-TDSON-8 | SOT3 | SuperSO8 5 x 6 | Tape & Reel (TR) | 8-PowerTDFN | TO-3 | 8-PowerTDFN | |
| Packing Method | Tape Reel; Tape & Reel | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | Tape Reel; Tape & Reel (TR) | ||||
| PD | 2500 to 69000 milliwatts | 2500 milliwatts | 2500 milliwatts |