Manufacturer: Infineon Technologies
Win Source Part Number: 100931-BSC080N03MSGA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A (Ta), 53A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 2100pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
Quantity per package: 5k pcs
N-Channel 30V 13A (Ta), 53A (Tc) 2.5W (Ta), 35W (Tc) Surface Mount PG-TDSON-8-5
N-Channel 30V 13A (Ta), 53A (Tc) 2.5W (Ta), 35W (Tc) Surface Mount PG-TDSON-8-5
N-Channel 30V 13A (Ta), 53A (Tc) 2.5W (Ta), 35W (Tc) Surface Mount PG-TDSON-8-5
BSC080N03 - 12V-300V N-Channel Power MOSFET
MOSFET N-CH 30V 13A/53A TDSON
| Win Source Electronics | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | RF Transistors |
| Product Number | 100931-BSC080N03MSGATMA1 | BSC080N03MSGATMA1CT-ND | BSC080N03MSGATMA1 | BSC080N03MSGATMA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC080N03MSGATMA1 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |
| V(BR)DSS | 30 volts | |||
| PD | 2500 to 35000 milliwatts |
