Power Field-Effect Transistor
MOSFET N-CH 60V 100A TDSON-8 FL
N-Channel 60V 100A (Tc) 3W (Ta), 188W (Tc) Surface Mount PG-TDSON-8 FL
N-Channel 60V 100A (Tc) 3W (Ta), 188W (Tc) Surface Mount PG-TDSON-8 FL
N-Channel 60V 100A (Tc) 3W (Ta), 188W (Tc) Surface Mount PG-TDSON-8 FL
MOSFET N-CH 60V 100A TDSON-8 FL Product overview: BSC014N06NSTATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC014N06NSTATMA
INFINEON MOSFET BSC014N06NSTATMA1
Manufacturer: Infineon Technologies
Category: Discrete Semiconductor Products Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series: OptiMOS™
Package: Tape & Reel (TR) Cut Tape (CT)
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
MOSFET N-CH 60V 100A TDSON-8 FL
MOSFET DIFFERENTIATED MOSFETS
MOSFET, N-CH, 60V, 100A, TDSON; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
| Rochester Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSC014N06NSTATMA1 | BSC014N06NSTATMA1 | BSC014N06NSTATMA1TR-ND | 278-BSC014N06NSTATMA1 | 2580681 | BSC014N06NSTATMA1 | BSC014N06NSTATMA1 | 93AC6982 | |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 60V 100A MOSFET Transistor | MOSFETs | Discrete Semiconductor Products Transistors -FETs, MOSFETs- Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 100A, Tdson; Channel Type Infineon | |
| Package Type | PG-TDSON-8 | 8-PowerTDFN | 8-PowerTDFN | Tape & Reel (TR) | TDSON | SOT3 | 8-PowerTDFN | TO-3 | |
| Packing Method | Tape Reel; Tape & Reel | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 60 volts | 60 volts |
