onsemi TRANSISTORS - Transistors (BJT) - Single - BD434STU BD434STU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1022912-BD434STU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 22V Max Vce (sat): 500mV @ 200mA, 2A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 40 @ 10mA, 5V Maximum Power Dissipation: 36W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance Quantity per package: 60
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1022912-BD434STU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 22V Max Vce (sat): 500mV @ 200mA, 2A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 40 @ 10mA, 5V Maximum Power Dissipation: 36W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance Quantity per package: 60
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - BD434STU - 1022912-BD434STU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD434STU
1022912-BD434STU
TRANSISTORS - Transistors (BJT) - Single - BD434STU 1022912-BD434STU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1022912-BD434STU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 22V Max Vce (sat): 500mV @ 200mA, 2A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 40 @ 10mA, 5V Maximum Power Dissipation: 36W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance Quantity per package: 60

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1022912-BD434STU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 22V
Max Vce (sat): 500mV @ 200mA, 2A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 40 @ 10mA, 5V
Maximum Power Dissipation: 36W
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Quantity per package: 60

Buy Now Datasheet
 - BD434STU - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 4A, 22V, PNP, TO-126, 3 Pin

Power Bipolar Transistor, 4A, 22V, PNP, TO-126, 3 Pin

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD434STU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD434STU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD434STU
TRANS PNP 22V 4A TO126-3

TRANS PNP 22V 4A TO126-3

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Bipolar RF Transistors
Product Number 1022912-BD434STU BD434STU BD434STU
Product Name TRANSISTORS - Transistors (BJT) - Single - BD434STU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP
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