onsemi Single Bipolar Transistors BD436T

Description
Bipolar (BJT) Transistor PNP 32V 4A 3MHz 36W Through Hole TO-126
  • Single Bipolar Transistors - BD436TOS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - BD436T - 102500-BD436T - Win Source Electronics
    Win Source Electronics
  • BD436T - Rochester Electronics
    Rochester Electronics
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Description
Bipolar (BJT) Transistor PNP 32V 4A 3MHz 36W Through Hole TO-126
Request a Quote Datasheet

Suppliers

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Product
Description
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Single Bipolar Transistors - BD436TOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD436TOS-ND
Single Bipolar Transistors BD436TOS-ND
Bipolar (BJT) Transistor PNP 32V 4A 3MHz 36W Through Hole TO-126

Bipolar (BJT) Transistor PNP 32V 4A 3MHz 36W Through Hole TO-126

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD436T - 102500-BD436T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD436T
102500-BD436T
TRANSISTORS - Transistors (BJT) - Single - BD436T 102500-BD436T
Manufacturer: ON Semiconductor Win Source Part Number: 102500-BD436T Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 32V Max Vce (sat): 500mV @ 200mA, 2A Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 85 @ 500mA, 1V Maximum Power Dissipation: 36W Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 102500-BD436T
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 32V
Max Vce (sat): 500mV @ 200mA, 2A
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 85 @ 500mA, 1V
Maximum Power Dissipation: 36W
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
- BD436T - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
BD436T
BD436T
PNP Bipolar Power Transistor

PNP Bipolar Power Transistor

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics
Product Category Transistors Transistors Power MOSFET
Product Number BD436TOS-ND 102500-BD436T BD436T
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BD436T
Polarity PNP PNP; PNP
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