MOSFET N-CH 25V 38A/100A TDSON Product overview: BSC010NE2LSIATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 38A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 38A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC010NE2LSIATMA
Manufacturer: Infineon Technologies
Win Source Part Number: 864621-BSC010NE2LSIA
Series: OptiMOS™
Features: N-Channel 25 V 38A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7
Package: Reel - TR
Package: 8-PowerTDFN
Mounting: Surface Mount
Family Name: BSC010
Categories: Discrete Semiconductor Products
Case / Package: PG-TDSON-8-7
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 92 pct.
Supply and Demand Status: Limited
Quantity per package: 5000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: BSC010NE2LSIATMA1DKR
N-Channel 25V 38A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7
N-Channel 25V 38A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7
N-Channel 25V 38A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7
OptiMOS Power-MOSFET
MOSFET, N-CH, 25V, 100A, 150DEG C, 96W; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
MOSFET N-CH 25V 38A/100A TDSON
MOSFET N-CH 25V 38A/100A TDSON
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Rochester Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-BSC010NE2LSIATMA1 | 864621-BSC010NE2LSIATMA1 | BSC010NE2LSIATMA1DKR-ND | BSC010NE2LSIATMA1 | 47Y7991 | BSC010NE2LSIATMA1 | BSC010NE2LSIATMA1 | BSC010NE2LSIATMA1 |
| Product Name | 25V 38A 100A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC010NE2LSIATMA1 | Single FETs, MOSFETs | Mosfet, N-Ch, 25V, 100A, 150Deg C, 96W; Channel Type Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 25 volts | 25 volts | ||||||
| Transconductance | 0.0800 kS | |||||||
| PD | 96 milliwatts | 2500 milliwatts |
