onsemi Single Bipolar Transistors BD437S

Description
Bipolar (BJT) Transistor NPN 45V 4A 3MHz 36W Through Hole TO-126-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 45V 4A 3MHz 36W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BD437SFS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD437SFS-ND
Single Bipolar Transistors BD437SFS-ND
Bipolar (BJT) Transistor NPN 45V 4A 3MHz 36W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 45V 4A 3MHz 36W Through Hole TO-126-3

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 - BD437S - Rochester Electronics
Newburyport, MA, United States
Medium Power NPN Bipolar Power Transistor

Medium Power NPN Bipolar Power Transistor

Supplier's Site Datasheet
 - BD437S - Rochester Electronics
Newburyport, MA, United States
Medium Power NPN Bipolar Power Transistor

Medium Power NPN Bipolar Power Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD437S - 103029-BD437S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD437S
103029-BD437S
TRANSISTORS - Transistors (BJT) - Single - BD437S 103029-BD437S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 103029-BD437S Packaging: Bulk Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 600mV @ 200mA, 2A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 30 @ 10mA, 5V Maximum Power Dissipation: 36W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 103029-BD437S
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 600mV @ 200mA, 2A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 30 @ 10mA, 5V
Maximum Power Dissipation: 36W
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

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Bipolar Transistors - BJT NPN Epitaxial Sil - 598-BD437S - Utmel Electronic Limited
Hong Kong, China
Bipolar Transistors - BJT NPN Epitaxial Sil
598-BD437S
Bipolar Transistors - BJT NPN Epitaxial Sil 598-BD437S
Bipolar Transistors - BJT NPN Epitaxial Sil

Bipolar Transistors - BJT NPN Epitaxial Sil

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD437S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD437S
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD437S
TRANS NPN 45V 4A TO126-3

TRANS NPN 45V 4A TO126-3

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BD437S
Bipolar Transistors - BJT BD437S
Bipolar Transistors - BJT NPN Epitaxial Sil

Bipolar Transistors - BJT NPN Epitaxial Sil

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Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BD437SFS-ND BD437S 103029-BD437S 598-BD437S BD437S BD437S
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BD437S Bipolar Transistors - BJT NPN Epitaxial Sil Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN; NPN NPN; NPN
Package Type TO-225AA, TO-126-3 TO-126-3 SOT3; TO-126
Packing Method Bulk; Bulk Bulk; Bulk Bulk; Bulk
Transistor Technology / Material SILICON
Number of units in IC 1
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