onsemi TRANSISTORS - Transistors (BJT) - Single - BD437S BD437S

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 103029-BD437S Packaging: Bulk Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 600mV @ 200mA, 2A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 30 @ 10mA, 5V Maximum Power Dissipation: 36W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 103029-BD437S Packaging: Bulk Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 600mV @ 200mA, 2A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 30 @ 10mA, 5V Maximum Power Dissipation: 36W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - BD437S - 103029-BD437S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD437S
103029-BD437S
TRANSISTORS - Transistors (BJT) - Single - BD437S 103029-BD437S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 103029-BD437S Packaging: Bulk Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 600mV @ 200mA, 2A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 30 @ 10mA, 5V Maximum Power Dissipation: 36W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 103029-BD437S
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 600mV @ 200mA, 2A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 30 @ 10mA, 5V
Maximum Power Dissipation: 36W
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Buy Now Datasheet
 - BD437S - Rochester Electronics
Newburyport, MA, United States
Medium Power NPN Bipolar Power Transistor

Medium Power NPN Bipolar Power Transistor

Supplier's Site Datasheet
 - BD437S - Rochester Electronics
Newburyport, MA, United States
Medium Power NPN Bipolar Power Transistor

Medium Power NPN Bipolar Power Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - BD437SFS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD437SFS-ND
Single Bipolar Transistors BD437SFS-ND
Bipolar (BJT) Transistor NPN 45V 4A 3MHz 36W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 45V 4A 3MHz 36W Through Hole TO-126-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD437S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD437S
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD437S
TRANS NPN 45V 4A TO126-3

TRANS NPN 45V 4A TO126-3

Supplier's Site
Bipolar Transistors - BJT NPN Epitaxial Sil - 598-BD437S - Utmel Electronic Limited
Hong Kong, China
Bipolar Transistors - BJT NPN Epitaxial Sil
598-BD437S
Bipolar Transistors - BJT NPN Epitaxial Sil 598-BD437S
Bipolar Transistors - BJT NPN Epitaxial Sil

Bipolar Transistors - BJT NPN Epitaxial Sil

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BD437S
Bipolar Transistors - BJT BD437S
Bipolar Transistors - BJT NPN Epitaxial Sil

Bipolar Transistors - BJT NPN Epitaxial Sil

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 103029-BD437S BD437S BD437SFS-ND BD437S 598-BD437S BD437S
Product Name TRANSISTORS - Transistors (BJT) - Single - BD437S Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT NPN Epitaxial Sil Bipolar Transistors - BJT
Polarity NPN; NPN NPN NPN; NPN
Package Type SOT3; TO-126 TO-126-3 TO-225AA, TO-126-3
Packing Method Bulk; Bulk Bulk; Bulk Bulk; Bulk
IC(max) 4000 milliamps 4000 milliamps
VCEO 45 volts 60 volts
Unlock Full Specs
to access all available technical data