NXP Semiconductors Discrete Semiconductor Products - Transistors - FETs, MOSFETs BLF7G20LS-90P,112

Description
RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
  • BLF7G20LS-90P,112 - Rochester Electronics
    Rochester Electronics
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Description
RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- BLF7G20LS-90P,112 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
BLF7G20LS-90P,112
BLF7G20LS-90P,112
RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BLF7G20LS-90P,112
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BLF7G20LS-90P,112
RF MOSFET LDMOS 28V LDMOST

RF MOSFET LDMOS 28V LDMOST

Supplier's Site

Technical Specifications

  Rochester Electronics Acme Chip Technology Co., Limited
Product Category Power MOSFET RF Transistors
Product Number BLF7G20LS-90P,112 BLF7G20LS-90P,112
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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