Infineon Technologies AG BSD316NL6327XTSA1

The BSD316SN is an N-channel enhancement mode MOSFET designed for small-signal switching applications, packaged in a PG-SOT363 surface-mount case. It has a drain-source breakdown voltage of 30 V, a continuous drain current of 1.4 A at 25 °C, and a maximum on-state resistance of 160 mΩ at V_{GS}=10 V and I_D=1.4 A. The device is logic level gated with a 4.5 V rating, avalanche rated, and qualifies under AEC-Q101. It is RoHS compliant and halogen-free per IEC 61249-2-21. The thermal resistance from junction to ambient is 250 K/W on a minimal footprint PCB. Operating and storage temperatures range from -55 °C to 150 °C.