Ampleon TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLS6G2731S-130,112 BLS6G2731S-130,112

Description
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet
Description
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - BLS6G2731S-130,112 - Rochester Electronics
Newburyport, MA, United States
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLS6G2731S-130,112 - 770231-BLS6G2731S-130,112 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLS6G2731S-130,112
770231-BLS6G2731S-130,112
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLS6G2731S-130,112 770231-BLS6G2731S-130,112
Manufacturer: Ampleon USA Inc. Win Source Part Number: 770231-BLS6G2731S-13 0,112 Packaging: Tube Package: SOT922-1 Current Rating: 33A Frequency: 2.7GHz ~ 3.1GHz Current - Test: 100mA Gain: 12dB Transistor Type: LDMOS Voltage - Test: 32V Power - Output: 130W Family Name: BLS6G2731S-130 Categories: Discrete Semiconductor Products Manufacturer Package: CDFM2 Voltage Rating DC: 60V Alternative Parts (Cross-Reference): BLS6G2731S-130; Introduction Date: December 07, 2015 ECCN: EAR99 Estimated EOL Date: 2030 Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited

Manufacturer: Ampleon USA Inc.
Win Source Part Number: 770231-BLS6G2731S-130,112
Packaging: Tube
Package: SOT922-1
Current Rating: 33A
Frequency: 2.7GHz ~ 3.1GHz
Current - Test: 100mA
Gain: 12dB
Transistor Type: LDMOS
Voltage - Test: 32V
Power - Output: 130W
Family Name: BLS6G2731S-130
Categories: Discrete Semiconductor Products
Manufacturer Package: CDFM2
Voltage Rating DC: 60V
Alternative Parts (Cross-Reference): BLS6G2731S-130;
Introduction Date: December 07, 2015
ECCN: EAR99
Estimated EOL Date: 2030
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BLS6G2731S-130,112 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BLS6G2731S-130,112
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BLS6G2731S-130,112
RF MOSFET LDMOS 32V CDFM2

RF MOSFET LDMOS 32V CDFM2

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics Acme Chip Technology Co., Limited
Product Category Power MOSFET RF MOSFET Transistors RF Transistors
Product Number BLS6G2731S-130,112 770231-BLS6G2731S-130,112 BLS6G2731S-130,112
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLS6G2731S-130,112 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Package Type SOT922 SOT3 SOT-922-1
Packing Method Tray Tube; Tube Tray
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