N-Channel 40V 38A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8 FL
N-Channel 40V 38A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8 FL
N-Channel 40V 38A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8 FL
MOSFET N-CH 40V 38A/100A TDSON Product overview: BSC010N04LSATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 38A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 38A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC010N04LSATMA1
OptiMOS Power-MOSFET, 40V
Manufacturer: Infineon Technologies
Win Source Part Number: 770400-BSC010N04LSAT
Series: OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Family Name: BSC010N04LS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: PG-TDSON-8 FL
Channel Type Type: N
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 95nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6800pF @ 20V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2.5W (Ta), 139W (Tc)
Rds On (Maximum) @ Id, Vgs: 1 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): BSC010N04LS; STLD257N4F7AG; STL210N4F7AG; STLD200N4F6AG;
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
MOSFET, N-CH, 40V, 100A, 150DEG C, 139W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET N-CH 40V 38A/100A TDSON
MOSFET N-CH 40V 38A/100A TDSON
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Rochester Electronics | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSC010N04LSATMA1TR-ND | 278-BSC010N04LSATMA1 | 2732626 | BSC010N04LSATMA1 | 770400-BSC010N04LSATMA1 | 50Y1792 | BSC010N04LSATMA1 | BSC010N04LSATMA1 | BSC010N04LSATMA1 |
| Product Name | Single FETs, MOSFETs | 40V 38A 100A MOSFET Transistor | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC010N04LSATMA1 | Mosfet, N-Ch, 40V, 100A, 150Deg C, 139W; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||||
| Package Type | 8-PowerTDFN | Tape & Reel (TR) | TDSON | PG-TDSON-8 | SOT3 | TO-3 | 8-PowerTDFN | 8-PowerTDFN | |
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 40 volts | 40 volts | |||||||
| Transconductance | 0.1400 kS |
