onsemi Single Bipolar Transistors BD237G

Description
Bipolar (BJT) Transistor NPN 80V 2A 3MHz 25W Through Hole TO-126
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 80V 2A 3MHz 25W Through Hole TO-126
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BD237GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD237GOS-ND
Single Bipolar Transistors BD237GOS-ND
Bipolar (BJT) Transistor NPN 80V 2A 3MHz 25W Through Hole TO-126

Bipolar (BJT) Transistor NPN 80V 2A 3MHz 25W Through Hole TO-126

Buy Now Datasheet
 - BD237G - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 2A, 80V, NPN, TO-225AA, Plastic/Epoxy, 3 Pin

Power Bipolar Transistor, 2A, 80V, NPN, TO-225AA, Plastic/Epoxy, 3 Pin

Supplier's Site Datasheet
Single Bipolar Transistors - BD237G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BD237G
Single Bipolar Transistors BD237G
TRANS NPN 80V 2A TO126

TRANS NPN 80V 2A TO126

Supplier's Site Datasheet
Singapore
80V 2A 25W Bipolar Transistor
276-BD237G
80V 2A 25W Bipolar Transistor 276-BD237G
80V 2A NPN BJT Power Transistor TO-225 25W Product overview: BD237G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 2A, 25W. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 2A, 25W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD237G can be used for catalog matching and distributor lookup.

80V 2A NPN BJT Power Transistor TO-225 25W Product overview: BD237G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 2A, 25W. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 2A, 25W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD237G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistors - 1868062 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
1868062
Bipolar Transistors 1868062
ON Semiconductor, BD237G

ON Semiconductor, BD237G

Supplier's Site
Bipolar Transistors - 1868062P - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
1868062P
Bipolar Transistors 1868062P
ON Semiconductor, BD237G

ON Semiconductor, BD237G

Supplier's Site
Bipolar Transistors - 1867352 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
1867352
Bipolar Transistors 1867352
ON Semiconductor, BD237G

ON Semiconductor, BD237G

Supplier's Site
TRANSISTORS - Transistors (BJT) - Single - BD237G - 079594-BD237G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD237G
079594-BD237G
TRANSISTORS - Transistors (BJT) - Single - BD237G 079594-BD237G
Manufacturer: ON Semiconductor Win Source Part Number: 079594-BD237G Packaging: Bulk Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 600mV @ 100mA, 1A Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 25 @ 1A, 2V Maximum Power Dissipation: 25W Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 079594-BD237G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 600mV @ 100mA, 1A
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 25 @ 1A, 2V
Maximum Power Dissipation: 25W
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD237G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD237G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD237G
TRANS NPN 80V 2A TO126

TRANS NPN 80V 2A TO126

Supplier's Site
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT - BD237G - LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
BD237G
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT BD237G
80V 25W 25@1A,2V 2A NPN TO-225-3 Bipolar Transistors - BJT ROHS

80V 25W 25@1A,2V 2A NPN TO-225-3 Bipolar Transistors - BJT ROHS

Supplier's Site Datasheet
Bipolar Transistor, Npn, 80V To-225; Transistor Polarity Onsemi - 26K3499 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Npn, 80V To-225; Transistor Polarity Onsemi
26K3499
Bipolar Transistor, Npn, 80V To-225; Transistor Polarity Onsemi 26K3499
BIPOLAR TRANSISTOR, NPN, 80V TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:2A; Power Dissipation:25W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz RoHS Compliant: Yes

BIPOLAR TRANSISTOR, NPN, 80V TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:2A; Power Dissipation:25W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BD237G
Bipolar Transistors - BJT BD237G
Bipolar Transistors - BJT 2A 80V 25W NPN

Bipolar Transistors - BJT 2A 80V 25W NPN

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Technical Specifications

  DigiKey Rochester Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BD237GOS-ND BD237G BD237G 276-BD237G 1868062 1868062P 079594-BD237G BD237G BD237G 26K3499 BD237G
Product Name Single Bipolar Transistors Single Bipolar Transistors 80V 2A 25W Bipolar Transistor Bipolar Transistors Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BD237G Discrete Semiconductor Products - Transistors - Bipolar (BJT) Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT Bipolar Transistor, Npn, 80V To-225; Transistor Polarity Onsemi Bipolar Transistors - BJT
Polarity NPN NPN; NPN NPN NPN NPN; NPN NPN NPN
Package Type TO-225AA, TO-126-3 CASE-77 TO-225AA, TO-126-3 To-225 TO-225 SOT3; TO-225AA TO-3
Packing Method Box Bulk; Bulk
IC(max) 2000 milliamps 2000 milliamps 2000 milliamps 2000 milliamps 2000 milliamps
VCEO 80 volts 80 volts 80 volts 80 volts 80 volts
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