Ampleon RF FETs, MOSFETs BLF8G27LS-100GVQ

Description
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet
Description
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - BLF8G27LS-100GVQ - Rochester Electronics
Newburyport, MA, United States
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
RF FETs, MOSFETs - 568-12835-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
568-12835-ND
RF FETs, MOSFETs 568-12835-ND
RF Mosfet LDMOS 28V 900mA 2.5GHz ~ 2.7GHz 17dB 25W CDFM6

RF Mosfet LDMOS 28V 900mA 2.5GHz ~ 2.7GHz 17dB 25W CDFM6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BLF8G27LS-100GVQ - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BLF8G27LS-100GVQ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BLF8G27LS-100GVQ
RF MOSFET LDMOS 28V CDFM6

RF MOSFET LDMOS 28V CDFM6

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Acme Chip Technology Co., Limited
Product Category Power MOSFET Transistors RF Transistors
Product Number BLF8G27LS-100GVQ 568-12835-ND BLF8G27LS-100GVQ
Product Name RF FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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